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  • American Society of Hematology  (48)
  • American Institute of Physics (AIP)  (44)
  • Nature Publishing Group  (19)
  • 1
    Electronic Resource
    Electronic Resource
    A selective Sema3A inhibitor enhances regenerative responses and functional recovery of the injured spinal cord (2006)
    [s.l.] : Nature Publishing Group
    Nature medicine 12 (2006), S. 1380-1389 
    Details
    ISSN: 1546-170X
    Source: Nature Archives 1869 - 2009
    Topics: Biology , Medicine
    Notes: [Auszug] Axons in the adult mammalian central nervous system (CNS) exhibit little regeneration after injury. It has been suggested that several axonal growth inhibitors prevent CNS axonal regeneration. Recent research has demonstrated that semaphorin3A (Sema3A) is one of the major inhibitors of axonal ...
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1038/nm1505
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  • 2
    Electronic Resource
    Electronic Resource
    Magnetoresistance and phase decomposition in Cr-Fe bulk alloys (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 77 (1995), S. 5843-5849 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report magnetoresistance in Cr-Fe bulk alloys and its variations associated with the microstructure change due to the phase decomposition. Large negative magnetoresistance (MR) is observed in the as-quenched Cr-Fe bulk alloy at liquid helium temperature, but not at room temperature. This is attributed to the spin cluster glass in the homogeneous solid solution. A unique feature of the MR in these homogenous alloys is that it does not saturate even in the presence of very high magnetic fields. However, such MR behavior changes when ferromagnetic particles precipitate by annealing. A lower degree of compositional fluctuation of Fe progresses by annealing the alloy at 773 K for 400 h and then a higher degree of decomposition occurs after a prolonged aging for 2600 h. In the annealed specimens, MR is observed even at room temperature. The MR change becomes more prominent at a lower field region, since ferromagnetic particles precipitate from the solid solution. The degree of the phase decomposition of the Cr-Fe solid solution is quantitatively evaluated by the atom probe analysis, and the origin of the MR dependence on the annealing conditions is discussed. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.359165
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  • 3
    Electronic Resource
    Electronic Resource
    Spontaneous appearance of high index facets during the evolution of step bunching on vicinal GaAs(001) (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 5601-5603 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The evolution of step bunching on vicinal GaAs(001) annealed at different temperatures in AsH3 and H2 ambient was studied by scanning tunneling microscopy. The results provided aspects of the evolution of step bunching from the initial to the final stage. We observed a appearance of additional step bunchings which have a peculiar azimuth of 〈210〉, 〈21¯0〉, 〈310〉, and 〈31¯0〉.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.357165
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  • 4
    Electronic Resource
    Electronic Resource
    Electromagnetic properties of Mn–Zn ferrite sintered ceramics (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 7129-7133 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Mn–Zn ferrite ceramics were prepared through the ceramic method starting from metal oxides. The ceramics' microstructural and electromagnetic properties were then evaluated. It was found that sintering density and ferrite grain size depend on both the sintering temperature and the kinds of the raw materials used. The changes in the microstructure were responsible for variations in magnetization, permeability, and electrical resistivity. The grain boundary resistivity, evaluated from the ac resistivity analysis, was especially affected. Increases in the electrical resistivity were counteracted by increases in the magnetization and permeability. This is also reflected in a trade-off of the hysteresis loss reduction and the lowering of the eddy current loss. This relationship between microstructural and electromagnetic properties can be explained by using the nonmagnetic and insulating grain boundary model. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.361482
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  • 5
    Electronic Resource
    Electronic Resource
    Area-selective deposition of organic conducting polymers on semiconductors: Polypyrrole-ZnO system (1987)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 62 (1987), S. 2143-2145 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Area-selective deposition of polypyrrole was successfully performed by three different procedures with electrochemical and photoelectrochemical techniques. These methods are important as tools for organic conducting pattern generation and functionalization of electrode surfaces.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.339512
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  • 6
    Electronic Resource
    Electronic Resource
    Magnetic tunnel junction device with perpendicular magnetization films for high-density magnetic random access memory (2002)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 91 (2002), S. 5246-5249 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We present here a magnetic tunnel junction device using perpendicular magnetization films designed for magnetic random access memory (MRAM). In order to achieve high-density MRAM, magnetic tunnel junction devices with a small area of low aspect ratio (length/width) is required. However, all MRAMs reported so far consist of in-plane magnetization films, which require an aspect ratio of 2 or more in order to reduce magnetization curling at the edge. Meanwhile, a perpendicular magnetic tunnel junction (pMTJ) can achieve an aspect ratio=1 because the low saturation magnetization does not cause magnetization curling. Magnetic-force microscope shows that stable and uniform magnetization states were observed in 0.3 μm×0.3 μm perpendicular magnetization film fabricated by focused-ion beam. In contrast, in-plane magnetization films clearly show the presence of magnetization vortices at 0.5 μm×0.5 μm, which show the impossibility of information storage. The PMTJ shows a magnetoresistive (MR) ratio larger than 50% with a squareness ratio of 1 and no degradation of MR ratio at 103 Ω μm2 ordered junction resistance. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1459605
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  • 7
    Electronic Resource
    Electronic Resource
    Laser-induced fluorescence from collisionally excited Si atoms in laser ablation plume (1999)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 86 (1999), S. 3964-3972 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Laser-induced fluorescence (LIF) from neutral Si atoms in a laser ablation plume is investigated using a probe laser beam at 251.6 nm. Fluorescence at 288 nm from the 4s(1P1) state is observed, aside from the deexcited fluorescence at 251.6 nm from the 4s(3P2) state. The coincidence of the 288 nm fluorescence and the 251 nm fluorescence strongly indicates that the Si atoms in the 4s(3P2) state are responsible for the 288 nm fluorescence. The 288 nm LIF signal is detectable only when the probe laser beam passes near the Si surface, and has maximum intensity for a time delay of 20 ns. The 288 nm LIF could be emitted when the Si atoms in the 4s(3P2) state, pumped by the probe laser, collide with other Si atoms in the gas phase, since a high-density gas phase of ejected particles exists near the surface. The LIF intensities from the ablated Si atoms decrease for large time delays of the probe laser (0.2 μs〈td〈100 μs), and the 288 nm fluorescence originating from the droplets (probably microparticles) is observed instead. Since droplets moving at ∼100 m/s are fragmented by the probe beam, the collisional excitation among these fragmented atoms can generate Si atoms in the 4s(1P1) state. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.371315
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  • 8
    Electronic Resource
    Electronic Resource
    Electron emission from N-doped homoepitaxially grown diamond (2002)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 92 (2002), S. 2194-2197 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The electron emission properties of N-doped homoepitaxially grown diamond have been measured and discussed in order to clarify the electron emission mechanism by excluding the effects of polycrystallinity. As a result, N-doped homoepitaxially grown diamond exhibits extremely low threshold electron emission even from extremely flat smooth surfaces without grain boundaries. This result strongly implies that the low threshold electron emission from N-doped diamond should be caused by the resistance of the film rather than by high β whatever the underlying mechanism is. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1494842
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  • 9
    Electronic Resource
    Electronic Resource
    Damage-free selective etching of Si native oxides using NH3/NF3 and SF6/H2O down-flow etching (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 74 (1993), S. 1345-1348 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Damage-free selective etching of Si native oxides against Si has been achieved by NH3/NF3 and SF6/H2O down-flow etching. In the NH3/NF3 etching, the wafer was covered with a film, and after its removal by heating above 100 °C, only SiO2 was found to be etched with an extremely high selectivity with respect to Si. Selective etching of Si oxides has also been obtained for SF6/H2O microwave discharge. In this case, a film of liquid solution containing HF and H2SOx is considered to form on the wafer surface. The selective etching of SiO2 takes place by the dissolved HF just as in the wet etching by an HF solution. The mechanisms of these selective reactions are discussed in detail based on the covalency of Si and SiO2 bondings.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.354890
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  • 10
    Electronic Resource
    Electronic Resource
    Highly selective etching of polycrystalline silicon on silicon dioxide at low wafer temperature, employing magnetron plasma (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 1505-1508 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A mechanism for highly selective etching of phosphorus-doped polycrystalline silicon (n+ poly-Si) on SiO2 by employing a Cl2 magnetron plasma reactor at low wafer temperatures was investigated. Only the SiO2 etch rate drops rapidly in the magnetron plasma at low wafer temperatures below 0 °C. X-ray photoelectron spectroscopy analysis revealed that only the SiO2 surface etched at lower temperatures was covered with silicon chloride or/and oxychloride compounds. The highly dense magnetron plasma decomposes the etched products into unsaturated molecules such as SiCl, SiCl2, and their oxides. These species have a large dipole moment and a higher sticking probability on SiO2 than on Si because the SiO2 bond is also ionic, and thus attracts a dipole molecule by Coulomb force. Thus, only the SiO2 surface was protected by a thin film from chlorine ion bombardment at a certain temperature range in the magnetron plasma. This protection film suppressed SiO2 etching, and a high selectivity of n+ poly-Si/SiO2 has been achieved.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.353224
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