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  • Springer  (142)
  • American Institute of Physics (AIP)  (54)
  • EDP Sciences  (2)
  • American Physical Society (APS)  (1)
  • Blackwell Publishing Ltd  (1)
  • 1
    Electronic Resource
    Electronic Resource
    Evidence of an off-center position of thulium in GaAs and excitonic excitation of the Tm3+ emission (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 74 (1993), S. 6457-6459 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: By photoluminescence and by Zeeman spectroscopy we study the characteristic 4f luminescence transition 3H5 → 3H6 at 1.0 eV of thulium in gallium arsenide which has been reported recently. It turns out that optically active Tm3+, which is present in mainly one specific type of center, does not occupy a simple substitutional lattice site. The results show a considerable tetragonal crystal field. The excitation mechanism of the 1.0-eV luminescence is investigated by photoluminescence excitation. The 3H5 → 3H6 is pumped most efficiently by trapping of free excitons.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.355133
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  • 2
    Electronic Resource
    Electronic Resource
    Identification of a nonradiative recombination center in GaAs (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 72 (1992), S. 4449-4451 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report on the identification of the CuGa acceptor level as a recombination center in GaAs. Using time-resolved photoluminescence (PL) we have studied the recombination of excess charge carriers in metalorganic vapor-phase epitaxy GaAs/AlGaAs double heterostructures. The recombination in one particular set of samples was clearly nonradiative and the trap level derived from our measurements coincides with that of CuGa as seen in the PL spectra. The temperature dependence of the capture coefficients is consistent with a multiphonon process and allows for the determination of the coupling strength for electron and hole capture.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.352184
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  • 3
    Electronic Resource
    Electronic Resource
    Application of microwave detection of the Shubnikov–de Haas effect in two-dimensional systems (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 7533-7542 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Microwave detection of the Shubnikov–de Haas (SdH) effect as a contact-free characterization technique for different types of two-dimensional semiconductor structures is explored in the low magnetic field region. The detection technique and the data analysis are described. The character and relevance of the single-particle relaxation time that can be detected by this technique are distinguished from the usual transport scattering time. The measured values of the carrier concentration and single-particle relaxation time agree with electrical measurements, while the problem of making contacts on the structure is avoided. Uncertainties in the analysis for the single-particle relaxation time are discussed. Cyclotron resonance, optically detected cyclotron resonance, and magneto-photoluminescence are applied as other contact-free techniques on the same samples. The results and suitability of these techniques are compared with the microwave detection of the SdH effect.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.354001
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  • 4
    Electronic Resource
    Electronic Resource
    Interfacial properties of very thin GaInAs/InP quantum well structures grown by metalorganic vapor phase epitaxy (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 71 (1992), S. 3300-3306 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: GaInAs/InP single quantum well structures with thicknesses below 5 nm were grown by metalorganic vapor phase epitaxy at reduced pressure. The sharpness of the heterojunctions in this III/V system is found to be strongly dependent on the applied gas switching sequence between the growth of the two materials caused by As carry over after GaInAs and by group V atom exchange at the surface during a hydride stabilized growth interruption. The photoluminescence properties can be improved by adding intermediate monolayers of InAsP between InP and GaInAs and GaInAsP between GaInAs and InP. The photoluminescence of very thin quantum wells is split into multiplets due to the formation of growth islands at the interface. Size and lateral distribution of these islands have been observed directly by cathodoluminescence analysis. On the other hand, transmission electron microscopy measurements show that the interfaces within the growth island regions are not atomically smooth but of a certain roughness. Small microislands with diameters of a few lattice constants form the "internal'' interface structure.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.350949
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  • 5
    Electronic Resource
    Electronic Resource
    Influence of domain size on optical properties of ordered GaInP2 (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 2633-2639 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Using dark-field transmission electron microscopy images of ordered GaInP samples, we show how the ordering domain size depends on the growth temperature. Samples with different average domain sizes are compared with regard to their photoluminescence (PL) and excitation spectra. We find a close correlation between the size of the ordered domains and the relative intensity of the PL peak from band–band recombination compared with the rapidly shifting, below-band-gap luminescence emission. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.361099
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  • 6
    Electronic Resource
    Electronic Resource
    Indirect-band-gap transition in strained GaInAs/InP quantum-well structures (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 75 (1994), S. 5067-5071 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Using photoluminescence (PL) and time-resolved measurements, the valence-band structure of tensile strained GaInAs quantum wells has been evaluated. From temperature-dependent PL, LO-phonon-assisted transitions at energies of about 32 meV below the band gap transition were observed. In addition, a hundredfold increase in the carrier lifetime of tensile strained quantum wells compared to unstrained layers was measured. Both findings are strong indications that the maximum of the valence band in k space is shifted away from the center of the Brillouin zone in tensile strained quantum wells near a critical composition, where the lowest heavy-hole and light-hole levels cross each other, thus giving rise for indirect optical transitions as predicted by theory.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.355749
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  • 7
    Electronic Resource
    Electronic Resource
    Optical transitions and carrier relaxation in self assembled InAs/GaAs quantum dots (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 80 (1996), S. 4019-4026 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We present experimental results concerning optical transitions and carrier dynamics (capture and relaxation) in self assembled InAs/GaAs quantum dot structures grown by metalorganic vapor phase epitaxy. Photoluminescence (PL) measurements at high excitation level reveal optical transitions above the ground state emission. These transitions are found to originate from occupied hole states by solving the quantum dot eigenvalue problem. Time-resolved studies after non-resonant pulse excitation exhibit a relaxation ladder of the excited carriers from the GaAs barrier down to the ground state of the quantum dots. From both the continuous-wave measurements and the PL-decay curves we conclude that the carrier relaxation at non-resonant excitation is mediated by Coulomb interaction (Auger effect). PL-decay curves after resonant pulse excitation reveal a longer rise time compared to non-resonant excitation which is a clear indication of a relaxation bottleneck inside the quantum dots. We interpret the rise time (≈ 400 ps) in this case to originate from relaxation via scattering by acoustic phonons. The PL-decay time of the ground state emission ≈700 ps is interpreted as the excitonic lifetime of the quantum dot. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.363361
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  • 8
    Electronic Resource
    Electronic Resource
    Role of electron traps in the excitation and de-excitation mechanism of Yb3+ in InP (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 77 (1995), S. 1523-1530 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: An experimental study concerning the excitation mechanism of the Yb impurity in n- and p-type InP crystals was performed by the method of optically detected microwave-induced impact ionization. Based on the results it is argued that the Yb3+ core excitation is intermediated by a nonradiative recombination of a bound exciton. A fingerprint of the existence of such an excitonic state is given. Also, the nonradiative decay channel is discussed and shown to involve an Auger process with the energy transfer to a locally bound electron. Experimental evidence is presented that by the impact ionization of the bound electron the nonradiative recombination channel may be removed, leading to an increase of the characteristic Yb3+ luminescence. An unprecedented microwave-induced 5% increase of the Yb3+ intrashell emission has been recorded. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.358903
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  • 9
    Electronic Resource
    Electronic Resource
    Nonlinear optical absorption in separate confinement multi-quantum-well structures due to spatial band bending (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 1184-1186 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report on nonlinear optical absorption in InGaAs/InGaAsP separate confinement multiple-quantum-well (SCMQW) structures based on charge-carrier induced band bending. Carrier induced localization and related changes in absorption strength due to spatial separation of electrons and holes are utilized to design SCMQW structures with a new type of optical nonlinearity. Experimentally, we observe strong changes in optical absorption with increasing excitation power. Compared to exciton bleaching, the new nonlinearity dominates at low carrier densities.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.358464
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  • 10
    Electronic Resource
    Electronic Resource
    Optically detected microwave-induced impact ionization of ytterbium bound excitons in InP (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 58 (1991), S. 2237-2239 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Optically detected microwave-induced impact ionization of excitons and shallow donors is studied in Yb-doped InP grown by metalorganic chemical vapor deposition. The experimental results directly confirm that Yb3+ intrashell emission is induced by nonradiative recombination of Yb bound excitons due to an impurity Auger effect. Yb3+ ions in InP are found to bind excitons with the electron being localized first, followed by subsequent hole capture.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.104937
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