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  • 11
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Chaos 3 (1993), S. 417-426 
    ISSN: 1089-7682
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In recent years chaotic behavior in scattering problems has been found to be important in a host of physical situations. Concurrently, a fundamental understanding of the dynamics in these situations has been developed, and such issues as symbolic dynamics, fractal dimension, entropy, and bifurcations have been studied. The quantum manifestations of classical chaotic scattering is also an extremely active field, with new analytical techniques being developed and with experiments being carried out. This issue of Chaos provides an up-to-date survey of the range of work in this important field of study.
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  • 12
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Chaos 10 (2000), S. 291-298 
    ISSN: 1089-7682
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Dynamical systems with invariant manifolds occur in a variety of situations (e.g., identical coupled oscillators, and systems with a symmetry). We consider the case where there is both a nonchaotic attractor (e.g., a periodic orbit) and a nonattracting chaotic set (or chaotic repeller) in the invariant manifold. We consider the character of the basins for the attracting nonchaotic set in the invariant manifold and another attractor not in the invariant manifold. It is found that the boundary separating these basins has an interesting structure: The basin of the attractor not in the invariant manifold is characterized by thin cusp shaped regions ("stalactites") extending down to touch the nonattracting chaotic set in the invariant manifold. We also develop theoretical scalings applicable to these systems, and compare with numerical experiments. © 2000 American Institute of Physics.
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  • 13
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 63 (1992), S. 5634-5643 
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: A variable-temperature ultrahigh vacuum scanning tunneling microscope is described which was specifically designed for the study of Ga surfaces close to the bulk melting point (Tm=29.8 °C). Since the temperature must be controlled with great accuracy the sample stage and the rest of the microscope are in thermal equilibrium. The instrument also incorporates a novel approach to vibration isolation that is based on a lossy acoustic waveguide. Analog electronics form an integral part of the microscope since a dynamic range of 120 dB must be reached. Interconnection techniques are discussed in this context and a circuit of a high-voltage amplifier is shown that provides a voltage swing of ±400 V with less than 1 mVpp noise over a bandwidth of 10 kHz. Results are presented which confirm the design concepts applied to this instrument.
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  • 14
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Physics of Plasmas 5 (1998), S. 151-155 
    ISSN: 1089-7674
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Wavenumber power spectra of the magnetic field in kinematic dynamos of Lagrangian chaotic flows are investigated. Numerical integration of the kinematic dynamo equations with magnetic Reynolds number Rm up to 105 shows that the wavenumber power spectrum of the magnetic field generated by smooth, Lagrangian chaotic flows obeys a power-law. This property is theoretically predicted by a wavepacket model, whereby magnetic field wavepackets are evolved according to ordinary differential equations. © 1998 American Institute of Physics.
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  • 15
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Chaos 7 (1997), S. 512-519 
    ISSN: 1089-7682
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The problem of directing a trajectory of a chaotic dynamical system to a target has been previously considered, and it has been shown that chaos allows targeting using only small controls. In this paper we consider targeting in a Hamiltonian system, whose phase space contains a mixture of regular quasi-periodic and chaotic regions. A multistep forward–backward method targeting strategic intermediate points is found to be efficient and robust. It takes full advantage of the phase space structure and is believed to yield optimal transport times. It is robust under the influence of small noise and small modeling errors and recovers from temporary loss of control. Two illustrative examples, the standard map and the restricted circular three body problem, are presented. (The latter corresponds to motion of a space probe in the presence of the earth and the moon.) Comparisons are made of our method to other targeting strategies. © 1997 American Institute of Physics.
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  • 16
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Chaos 3 (1993), S. 495-503 
    ISSN: 1089-7682
    Source: AIP Digital Archive
    Topics: Physics
    Notes: One of the generic ways in which chaotic scattering can come about as a system parameter is varied is the so-called "abrupt bifurcation'' in which the scattering is nonchaotic on one side of the bifurcation and is chaotic and hyperbolic on the other side. Previous work demonstrating the abrupt bifurcation [S. Bleher et al., Phys. Rev. Lett. 63, 919 (1989); Physica D 46, 87 (1990)] was primarily for the case where the scattering potential had maxima ("hilltops'') which had locally circular isopotential contours. Here we extend these considerations to the more general case of locally elliptically shaped isopotential contours at the hilltops. It turns out that the conditions for the abrupt bifurcation change drastically as soon as even a small amount of noncircularity is included (i.e., the circular case is singular). The illustrative case of scattering from three isolated potential hills is dealt with in detail. One interesting result is a simple geometrical sufficient condition for an abrupt bifurcation in the case of large enough ellipticity of the hill with lowest potential at its hilltop.
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  • 17
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 77 (1995), S. 2231-2243 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The feasibility of superconducting strips as position-sensitive detectors for α particles was investigated. For this purpose films have been prepared of different materials and dimensions using standard evaporation and laser ablation in an UHV system. Films were patterned into strips and current-biased strips were irradiated with 5.5 MeV α particles. The energy deposited by the particle in the strip creates a normal-conducting region, which in turn causes a voltage drop. The time evolution of the voltage drop across the strip as a function of bath temperature and bias current has been investigated. Information about the site of the strip hit by the α particle was obtained from monitoring the propagating normal-conducting zones. A lateral position sensitivity of ±30 μm for a tantalum strip detector has been achieved. The propagation of normal-state zones in the strip cannot provide information on the energy of the particle. A model describing the time evolution of a normal-conducting zone in a current-biased superconducting strip was used to test and interpret the experimental results and allows one to estimate the thermal conductivity of the strip material and the heat transfer from the strip into the substrate. © 1995 American Institute of Physics.
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  • 18
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 58 (1991), S. 461-462 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The time differential perturbed angular correlation technique was applied to study the electric quadrupole coupling of 111Cd in the II-VI semiconductor CdS (20 K≤T≤1000 K). Two kinds of sample preparation were used: implantation and diffusion. Obtained results for the regular lattice sites were independent of the preparation. The measured electric field gradient (EFG) was between 6.7±0.4 MHz and 9.1±0.2 MHz. Data were confirmed by point-charge calculations. Implantation however caused a second EFG (≈78 MHz) that was assigned to a defect due to the preceding irradiation.
    Type of Medium: Electronic Resource
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  • 19
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: An increase by over three orders of magnitude from 0.58 mΩ to 1.17 Ω was observed at 4.0 K in the 3 GHz microwave surface resistance of ceramic YBa2Cu3O7−δ following exposure to neutrons. The transport resistivity of an unirradiated pellet was linear in temperature down to Tc with a room-temperature value of 2.13 mΩ cm and a resistivity extrapolated to 4.0 K of 0.53 mΩ cm. Following irradiation, the resistivity rose with decreasing temperature from a room-temperature value of 1.5 Ω cm to a maximum at around 45 K with little change evident at Tc . These results, in conjunction with eddy current, susceptibility, iodometric titration, and thermally stimulated luminescence measurements on irradiated and unirradiated samples, collectively suggest that the effect of neutron irradiation has been to decrease intergranular coupling without the development of an insulating phase.
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  • 20
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 57 (1990), S. 389-391 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Direct experimental evidence is presented for the correlation between void formation, dopant electrical activation, and layer intermixing in GaAs/AlGaAs superlattices (SLs). Maximum layer intermixing is observed in the regions of maximum carrier concentration and no or little void formation in Si-implanted and annealed SLs. In SLs implanted at room temperature, Si activation and layer intermixing enhancement are severely inhibited in the near-surface region where voids are formed. However, when implantation is carried out at 250 °C, both the suppression of Si activation and layer intermixing enhancement in the near-surface region are reduced, concurrent with a decrease in void density.
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