Publikationsdatum:
2013-01-11
Beschreibung:
Flexural tensile and compressive constraints were applied mechanically to the 7.5 nm thick HfO 2 films on Si substrates to investigate the influences of stress on the Si outward emission behavior in Si / HfO 2 during annealing. The constraint stress inhibited further growth of the interfacial layer (IL) between HfO 2 and Si , suppressing the IL-growth-induced Si outward emission. This fact was associated with atomic rearrangement that was induced during constrained annealing, resulting in the formation of a robust HfO 2 layer with low oxygen vacancy. Such an HfO 2 layer effectively suppressed the inward diffusion of oxygen, the IL growth and the Si out-diffusion.
Print ISSN:
0002-7820
Digitale ISSN:
1551-2916
Thema:
Maschinenbau
Permalink