ISSN:
1662-9752
Source:
Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
Topics:
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
Notes:
This paper reports on initial results from the first device tested of a “second generation”Pt-SiC Schottky diode hydrogen gas sensor that: 1) resides on the top of atomically flat 4H-SiCwebbed cantilevers, 2) has integrated heater resistor, and 3) is bonded and packaged. With properselection of heater resistor and sensor diode biases, rapid detection of H2 down to concentrations of 20ppm was achieved. A stable sensor current gain of 125 ± 11 standard deviation was demonstratedduring 250 hours of cyclic test exposures to 0.5% H2 and N2/air
Type of Medium:
Electronic Resource
URL:
http://www.tib-hannover.de/fulltexts/2011/0528/02/20/transtech_doi~10.4028%252Fwww.scientific.net%252FMSF.600-603.1199.pdf
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