Publication Date:
2015-02-25
Description:
Author(s): Weikai Yin, Kirby Smithe, Philip Weiser, Michael Stavola, W. Beall Fowler, Lynn Boatner, Stephen J. Pearton, David C. Hays, and Sandro G. Koch Transparent conducting oxides, such as In 2 O 3 , are optically transparent wide band gap semiconductors with high electrical conductivity and are used in applications such as transparent electrical circuits and flat panel displays. Some previous research has argued that conductivity in In 2 O 3 is caused mainly by oxygen vacancies, as in other transparent conducting oxides. Using infrared absorbtion spectroscopy on single-crystal In 2 O 3 , the authors show that, consistent with theory, interstital hydrogen forms shallow donors, which make an important contribution to the n -type conductivity. [Phys. Rev. B 91, 075208] Published Tue Feb 24, 2015
Keywords:
Semiconductors I: bulk
Print ISSN:
1098-0121
Electronic ISSN:
1095-3795
Topics:
Physics
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