Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
73 (1998), S. 1149-1151
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
We have fabricated scanning probe microscope cantilevers with dimensions 65×11.4×0.25 μm3 and 3×2×0.129 μm3 from GaAs/Al0.3Ga0.7As heterostructures containing two-dimensional electron gases. Deflection is measured by an integrated field-effect transistor (FET) that senses strain via the piezoelectric effect and provides a low noise, low power displacement readout. We present images of a 200 nm mica grating taken with the large cantilever having a deflection (force) noise 10 Å/(square root of)Hz (19 pN/(square root of)Hz) at T=2.2 K. The small cantilever has a resonant frequency of 11 MHz, a FET gate charge noise of 0.001 e/(square root of)Hz, and is projected to have a deflection (force) noise of 0.002 Å/(square root of)Hz (1 pN/(square root of)Hz) at T=4.2 K. © 1998 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.122112
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