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  • Springer Nature  (405)
  • American Institute of Physics  (226)
  • American Institute of Physics (AIP)  (63)
  • Cell Press  (54)
  • BioMed Central  (38)
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  • 1
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    Chemical modification of deltamycins. I. 4"-O-acyl analogs of deltamycins. (1980)
    Springer Nature
    Details
    Publication Date: 1980-01-01
    Print ISSN: 0021-8820
    Electronic ISSN: 1881-1469
    Topics: Chemistry and Pharmacology , Medicine
    Published by Springer Nature
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    PAPER CURRENT
  • 2
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    THE EFFECT OF BLEOMYCIN ON SV40 DNA: CHARACTERISTICS OF BLEOMYCIN ACTION WHICH PRODUCES A SINGLE SCISSION IN A SUPERHELICAL FORM OF SV40 DNA (1973)
    Springer Nature
    Details
    Publication Date: 1973-01-01
    Print ISSN: 0021-8820
    Electronic ISSN: 1881-1469
    Topics: Chemistry and Pharmacology , Medicine
    Published by Springer Nature
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    PAPER CURRENT
  • 3
    Electronic Resource
    Electronic Resource
    Light-enhanced ferrite plating of Fe3−xMxO4 (M=Ni, Zn, Co, and Mn) films in an aqueous solution (invited) : 35th annual conference on magnetism and magnetic materials (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 69 (1991), S. 5911-5914 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Polycrystalline spinel ferrite films were plated on glass substrates in an aqueous solution by the thin liquid-film method combined with an electric lamp, which was named "light-enhanced ferrite plating.'' By irradiating the substrate surface with a Xe lamp (450 W/cm2), the deposition rate of Fe3O4 films increased by a factor of ∼5–10 (from 30 to 150–320 nm/min) compared to that obtained without the light irradiation. The Fe3O4 film prepared in a reaction solution with a small FeCl2 concentration had a structure (i.e., grain size ∼200 nm, and columnar structure perpendicular to the film surface) similar to that observed when prepared without the light irradiation. However, the grain size increased and the columnar structure disappeared as the FeCl2 concentration increased. The deposition rate of Fe3−xMxO4 (M=Ni, Mn, Co, and Zn) was 50–100 nm/min and increased by a factor of 2–5 compared to that without the light irradiation. The saturation magnetization of the all films prepared with the light irradiation agrees with the value of the bulk samples.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.347837
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  • 4
    Electronic Resource
    Electronic Resource
    Crystal distortion and weak ferromagnetism of Mn3+δGa1−xGex alloys : 37th Annual conference on magnetism and magnetic materials (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 5692-5694 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The compound Mn3Ga (70–74 at.% Mn) has the hexagonal DO19-type structure, and a triangular antiferromagnetic spin structure with a weak ferromagnetic component below the Néel temperature of about 470 K. Below 170 K the hexagonal structure is distorted to an orthorhombic one, accompanied by a steep increase in the ferromagnetic component. X-ray-diffraction experiments and magnetization measurements have been made for a pseudobinary system Mn3+δGa1−xGex. It was found that the DO19-type structure is stable at 600 °C in the whole composition range 0≤x≤1.0 with appropriate values of δ. The Néel temperature of the triangular spin structure decreases with increasing x with a gentle slope. The crystal distortion temperature decreases more steeply and vanishes near x=0.6.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.353593
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  • 5
    Electronic Resource
    Electronic Resource
    Subsurface reactions of silicon nitride in a highly selective etching process of silicon oxide over silicon nitride (2002)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 91 (2002), S. 3452-3458 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In situ subsurface reaction measurements of silicon nitride in a selective etching process of silicon oxide over silicon nitride using an x-ray photoelectron spectroscopy (XPS) and a Fourier transform infrared reflection absorption spectroscopy (FTIR RAS) have been carried out. Under low selectivity etching conditions using an electron cyclotron resonance plasma employing a pure octafluorocyclobutane (C4F8) gas, a clear difference has been observed between time-evolution spectra of FTIR RAS and those of XPS on the etched silicon nitride films. From these results it has been found that the etching reaction layer is thicker than that under highly selective etching conditions and that SiF3 bonds are located in the deeper region rather than in the shallow region of the reaction layer. On the other hand, under highly selective etching conditions employing C4F8 gas diluted by Ar gas, it has been observed that the shallow region of the reaction layer in the etched silicon nitride films becomes C–C cross-linking-rich and CN sp2 bond-rich. From these results, it is concluded that the C–C cross linking prevents CN sp2 bonds from reacting with F atoms, resulting in the suppression of the etch by-products such as FCN. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1448870
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  • 6
    Electronic Resource
    Electronic Resource
    Plasma diagnostics and low-temperature deposition of microcrystalline silicon films in ultrahigh-frequency silane plasma (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 88 (2000), S. 576-581 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Microcrystalline silicon thin films were formed on quartz substrates by ultrahigh-frequency (UHF) plasma enhanced chemical vapor deposition from a mixture of silane (SiH4) and hydrogen (H2) gases at low substrate temperatures (Ts). The UHF plasma was excited at a frequency of 500 MHz. The deposition rate and the crystallinity of the films were investigated as a function of H2 dilution, total pressure, mixture ratio of SiH4 to H2 and Ts. A crystalline fraction of 63% with a high deposition rate of 7.7 Å/s was obtained even at a Ts of 100 °C. At a temperature of 300 °C, a crystalline fraction of approximately 86% was achieved at a deposition rate of 1.4 Å/s. Diagnostics of the UHF plasma have been carried out using a Langmuir probe, ultraviolet absorption spectroscopy, and optical emission spectroscopy. Good crystallinity was explained by the balance of the sheath voltage and atomic hydrogen densities in the UHF plasma. Namely, the UHF plasma source achieving a high density plasma with a low electron temperature enabled us to reduce the ion bombardment energy incident on the substrates while maintaining a high density of hydrogen atoms, and which improved the crystallinity at low Ts. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.373698
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  • 7
    Electronic Resource
    Electronic Resource
    Study on dynamical structure in water and heavy water by low-frequency Raman spectroscopy (1992)
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 97 (1992), S. 1961-1968 
    Details
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: Depolarized Raman spectra below 250 cm−1 in water and heavy water were measured and analyzed from 373 K to the supercooled region. The spectral feature of the central component below 20 cm−1 is stressed in the present work. The spectra below 250 cm−1 in water and heavy water are interpreted as a superposition of one Debye-type relaxation mode and two damped harmonic oscillators. The damped harmonic oscillators (broadbands around 60 cm−1 and 190 cm−1) are interpreted as the restricted translational modes. Analyzing the temperature dependence of the relaxation mode, the reciprocal relaxation time τ−1 in heavy water changes linearly with τ−1 ∝ (T − 240 K) in the whole temperature range. On the other hand, the temperature dependence of the reciprocal relaxation time in water above 303 K deviates from a straight line which holds below 298 K as τ−1 ∝ (T − 225 K).
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.463133
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  • 8
    Electronic Resource
    Electronic Resource
    Evolution of paired luminous rings in capacitive radio-frequency hydrogen discharges (1997)
    [S.l.] : American Institute of Physics (AIP)
    Physics of Plasmas 4 (1997), S. 1179-1181 
    Details
    ISSN: 1089-7674
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The temporal and spatial evolution of paired luminous rings is observed in pulsed capacitive radio-frequency (rf) hydrogen discharges. The time-resolved axial profile of the light intensity indicates that the outermost ring pairs near the electrodes start to appear earlier than the inner ones, and that only the left-side (right-side) rings of ring pairs turn on when the rf voltage applied to the left-side (right-side) electrode is positive. The physical mechanism to create the paired rings seems to be similar to that of the standing striations in dc glow discharges. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.872357
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  • 9
    Electronic Resource
    Electronic Resource
    Absolute concentration and loss kinetics of hydrogen atom in methane and hydrogen plasmas (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 90 (2001), S. 5497-5503 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A measurement technique of the absolute concentration of hydrogen (H) atoms in methane (CH4) and/or hydrogen molecule (H2) plasmas has been established. The H-atom concentration was evaluated by vacuum ultraviolet absorption spectroscopy (VUVAS) using a high-pressure H2 microdischarge hollow cathode lamp (H2-MHCL) as the Lyman α (Lα 121.6 nm) light emission source. A measurement technique of the background absorption caused by species other than H atoms at the Lα line was developed by using the VUVAS technique with the MHCL employing nitrogen molecules (N2-MHCL). The lines around Lα used for the background absorption measurements are 2p23s 4P5/2–2p3 4S3/20 at 119.955 nm, 2p23s 4P3/2–2p3 4S3/20 at 120.022 nm, and 2p23s 4P1/2–2p3 4S3/20 at 120.071 nm of the N atom. By using the VUVAS technique with the MHCLs and subtracting the background absorption from the absorption of H atoms at Lα, we have achieved the measurement of the H-atom concentration in an inductively coupled plasma operated in CH4 and/or H2. The H-atom concentration increased from 2×1011 to 3×1012 cm−3 when increasing the CH4 flow rate ratios from 0% to 50% in the CH4–H2 mixture and was almost constant in its range between 50% and 100% at a pressure of 1.33 Pa, a radio frequency power of 200 W, and a total flow rate of 100 sccm. The behavior of the H-atom concentration was compared with that of the Balmer α emission intensity. The decay of the H-atom concentration in the H2 plasma afterglow was investigated to clarify the loss kinetics of H atoms. The dependence of the decay time constant on the pressure showed that H atoms were dominantly lost through diffusion to the wall surface. The diffusion constant of H atoms in H2 plasmas was determined to be 3.0×105 cm2 Pa s−1 at 400 K. The surface loss probability of H atoms on the stainless-steel and the hydrocarbon walls were estimated to be 0.15 and 0.07, respectively. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1410327
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  • 10
    Electronic Resource
    Electronic Resource
    Analysis of electric field distribution in GaAs metal–semiconductor field effect transistor with a field-modulating plate (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 87 (2000), S. 3483-3487 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Electric field distribution in the channel of a field effect transistor (FET) with a field-modulating plate (FP) has been theoretically investigated using a two-dimensional ensemble Monte Carlo simulation. This analysis revealed that the introduction of FP is effective in canceling the influence of surface traps under forward bias conditions and in reducing the electric field intensity at the drain side of the gate edge under pinch-off bias conditions. This study also found that a partial overlap of the high-field region under the gate and that at the FP electrode is important for reducing the electric field intensity. The optimized metal–semiconductor FET with FP (FPFET) (LGF∼0.2 μm) exhibited a much lower peak electric field intensity than a conventional metal–semiconductor FET. Based on these numerically calculated results, we have proposed a design procedure to optimize the power FPFET structure with extremely high breakdown voltages while maintaining reasonable gain performance. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.372370
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