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  • Springer Nature  (405)
  • Wiley  (262)
  • American Institute of Physics  (226)
  • American Institute of Physics (AIP)  (63)
  • Cell Press  (54)
  • BioMed Central  (38)
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  • 11
    Electronic Resource
    Electronic Resource
    Evolution of paired luminous rings in capacitive radio-frequency hydrogen discharges (1997)
    [S.l.] : American Institute of Physics (AIP)
    Physics of Plasmas 4 (1997), S. 1179-1181 
    Details
    ISSN: 1089-7674
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The temporal and spatial evolution of paired luminous rings is observed in pulsed capacitive radio-frequency (rf) hydrogen discharges. The time-resolved axial profile of the light intensity indicates that the outermost ring pairs near the electrodes start to appear earlier than the inner ones, and that only the left-side (right-side) rings of ring pairs turn on when the rf voltage applied to the left-side (right-side) electrode is positive. The physical mechanism to create the paired rings seems to be similar to that of the standing striations in dc glow discharges. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.872357
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  • 12
    Electronic Resource
    Electronic Resource
    Absolute concentration and loss kinetics of hydrogen atom in methane and hydrogen plasmas (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 90 (2001), S. 5497-5503 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A measurement technique of the absolute concentration of hydrogen (H) atoms in methane (CH4) and/or hydrogen molecule (H2) plasmas has been established. The H-atom concentration was evaluated by vacuum ultraviolet absorption spectroscopy (VUVAS) using a high-pressure H2 microdischarge hollow cathode lamp (H2-MHCL) as the Lyman α (Lα 121.6 nm) light emission source. A measurement technique of the background absorption caused by species other than H atoms at the Lα line was developed by using the VUVAS technique with the MHCL employing nitrogen molecules (N2-MHCL). The lines around Lα used for the background absorption measurements are 2p23s 4P5/2–2p3 4S3/20 at 119.955 nm, 2p23s 4P3/2–2p3 4S3/20 at 120.022 nm, and 2p23s 4P1/2–2p3 4S3/20 at 120.071 nm of the N atom. By using the VUVAS technique with the MHCLs and subtracting the background absorption from the absorption of H atoms at Lα, we have achieved the measurement of the H-atom concentration in an inductively coupled plasma operated in CH4 and/or H2. The H-atom concentration increased from 2×1011 to 3×1012 cm−3 when increasing the CH4 flow rate ratios from 0% to 50% in the CH4–H2 mixture and was almost constant in its range between 50% and 100% at a pressure of 1.33 Pa, a radio frequency power of 200 W, and a total flow rate of 100 sccm. The behavior of the H-atom concentration was compared with that of the Balmer α emission intensity. The decay of the H-atom concentration in the H2 plasma afterglow was investigated to clarify the loss kinetics of H atoms. The dependence of the decay time constant on the pressure showed that H atoms were dominantly lost through diffusion to the wall surface. The diffusion constant of H atoms in H2 plasmas was determined to be 3.0×105 cm2 Pa s−1 at 400 K. The surface loss probability of H atoms on the stainless-steel and the hydrocarbon walls were estimated to be 0.15 and 0.07, respectively. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1410327
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  • 13
    Electronic Resource
    Electronic Resource
    Analysis of electric field distribution in GaAs metal–semiconductor field effect transistor with a field-modulating plate (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 87 (2000), S. 3483-3487 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Electric field distribution in the channel of a field effect transistor (FET) with a field-modulating plate (FP) has been theoretically investigated using a two-dimensional ensemble Monte Carlo simulation. This analysis revealed that the introduction of FP is effective in canceling the influence of surface traps under forward bias conditions and in reducing the electric field intensity at the drain side of the gate edge under pinch-off bias conditions. This study also found that a partial overlap of the high-field region under the gate and that at the FP electrode is important for reducing the electric field intensity. The optimized metal–semiconductor FET with FP (FPFET) (LGF∼0.2 μm) exhibited a much lower peak electric field intensity than a conventional metal–semiconductor FET. Based on these numerically calculated results, we have proposed a design procedure to optimize the power FPFET structure with extremely high breakdown voltages while maintaining reasonable gain performance. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.372370
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  • 14
    Electronic Resource
    Electronic Resource
    Electroluminescent features of oligothiophenes dispersed as a dopant in host matrices (2002)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 91 (2002), S. 5706-5711 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The electroluminescent (EL) features of oligothiophenes dispersed as a dopant in the host matrices comprising tris(8-hydroxyquinoline)aluminum have been investigated. We chose the oligothiophenes that are substituted with phenyl or methyl groups at both the molecular terminals and possess various degrees of polymerization. Regarding both the phenyl- and methyl-substituted materials, the EL spectra are progressively red-shifted with the increasing number of thiophenes. Comparing these spectra with the photoluminescent spectra, we have found out that the EL arises mostly from the dopant molecules of the oligothiophenes. The emission is dominated by energy transfer from host matrices to the dopant molecules, leading to the enhanced device efficiencies. The specific effects of the phenyl- or methyl-substitution and the extension of the π-delocalization in the molecules are also discussed. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1465510
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  • 15
    Electronic Resource
    Electronic Resource
    Behavior of hydrogen atoms in ultrahigh-frequency silane plasma (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 89 (2001), S. 4727-4731 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have investigated the behavior of the absolute density of hydrogen (H) atoms in ultrahigh-frequency (UHF), (500 MHz) silane (SiH4) plasma by using a vacuum ultraviolet absorption spectroscopy technique with a microdischarge hollow cathode lamp. In the UHF plasma using SiH4 highly diluted with hydrogen molecule (H2) at a pressure of 20 Pa, an UHF power of 1000 W, and a total flow rate of 200 sccm, the absolute density of H atoms slightly increased from 7.4×1011 to 7.9×1011 cm−3 with increasing the SiH4 flow rate ratios from 0% to 2.5% and then the H atom density decreased at the ratio of 5%. The decrease of the density is due to the increase of the reaction between the H atom and the SiH4 molecule. The behavior of the absolute density of H atoms was compared with that of the Balmer α(Hα) emission intensity. It was found that the behaviors of the absolute H atom density and the Hα emission intensity were quite different. Moreover, the kinetics of H atom density in SiH4 plasmas have been clarified on the basis of measured results. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1362414
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  • 16
    Electronic Resource
    Electronic Resource
    Dual-electrode biasing for controlling ion-to-adatom flux ratio during ion-assisted deposition of diamond (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 89 (2001), S. 4714-4718 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A dual-bias method using a grid mesh inserted into the front of a substrate has been employed to control the ion-to-adatom flux ratio in an inductively coupled plasma for depositing crystalline materials preferring low-energy ion bombardment. The Langmuir probe measurements revealed that the ion flux toward the substrate decreased with increasing a positive substrate bias with the grid grounded, while it increased with increasing a positive grid bias with the substrate grounded. Ion energy analyses along the diffusing plasma stream by using a probe and a mass spectrometer revealed the contribution of a high-energy tail in the ion-energy distribution into the bombarding ion flux. The ion-assisted deposition of diamond at a pressure of 10 mTorr was performed at a bombarding ion energy as low as the drifting energy (∼several eV). The results indicate the need for optimizing the ion-to-adatom flux ratio for efficient migration and clustering of precursor adatoms yielding a high nucleation density over 109 cm−2. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1359159
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  • 17
    Electronic Resource
    Electronic Resource
    Measurement and control of absolute nitrogen atom density in an electron-beam-excited plasma using vacuum ultraviolet absorption spectroscopy (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 88 (2000), S. 1756-1759 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The absolute nitrogen (N) atom density in an electron-beam-excited plasma (EBEP) operating at an ultralow pressure has been investigated by vacuum ultraviolet absorption spectroscopy, employing a microdischarge hollow-cathode lamp. The measured N atom density was estimated to be around 6×1011 cm−3, and the dissociation fraction was 4.9% at a N2 pressure of 0.05 Pa, an electron-beam current of 10 A, and an electron-beam acceleration voltage of 120 V. The EBEP potentially enables us to control the electron density and electron energy independently with the electron-beam current and electron-beam acceleration voltages, respectively. It was found that N atom densities increased with increasing electron-beam current and electron acceleration voltage under low-pressure conditions. The EBEP shows great promise as a N atom source operating at an ultralow pressure. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1305559
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  • 18
    Electronic Resource
    Electronic Resource
    Kinetics and role of C, O, and OH in low-pressure nanocrystalline diamond growth (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 87 (2000), S. 4572-4579 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A simple low-pressure condition at 80 mTorr has been employed to study the kinetics and role of C, O, and OH in diamond growth by using inductively coupled CO/CH4/H2 and O2/CH4/H2 plasmas. Vacuum ultraviolet absorption spectroscopy (VUVAS) and actinometric optical emission spectroscopy (OES) were used to examine the densities of ground-state C atoms and emissive species such as OH, C2, and O, respectively. Diamond films consisting of nanocrystallites with sizes as small as 20 nm were obtained on positively biased Si substrates only when CH4 was fed. Both diamond and nondiamond growth were enhanced with increasing CO for a fixed CH4 concentration of 5%, while diamond growth was suppressed with increasing O2. Comprehensive discussion along with the VUVAS and OES results suggested that the C atoms resulting mainly from CO by electron impact dissociation had a close relation with the formation of C2 or still larger species as the precursors to nondiamond phase, while the OH radicals resulting predominantly by loss reactions of the byproduct O atoms with H2 and CH4 were highly responsible for the enhanced diamond growth. A large amount of O atoms from O2 was shown to affect the initial nucleation stage seriously. The results support the growth chemistry of diamond from H-hybridized carbon radicals fragmented from CH4 rather than from H-stripped carbon radicals. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.373104
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  • 19
    Electronic Resource
    Electronic Resource
    Precursors of fluorocarbon film growth studied by mass spectrometry (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 87 (2000), S. 7185-7190 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The precursor species of fluorocarbon film growth at the reactor wall irradiated by an electron cyclotron resonance C4F8 plasma have been studied by using a quadrupole mass spectrometer. The amount of polymeric neutral species [CmFn (m≥2)] and absolute densities of CFx (x=1–3) radicals in the vicinity of the wall were measured by electron attachment and threshold ionization mass spectrometry, respectively. The trends in the film growth rate as a function of gas residence time, diluted hydrogen concentration, and microwave power were well accounted for by the competition between the incorporation of CFx radicals and positive ions and the removal by F and H atoms. The fluxes of CFx radicals and positive ions incident upon the wall were shown to be comparable with the net condensed carbon flux derived from the growth rate. In contrast, the trends in the amount of polymeric neutrals were not well correlated to the growth rate. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.372967
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  • 20
    Electronic Resource
    Electronic Resource
    Upgrade of the Photon Factory storage ring for a high brilliance configuration : Proceedings of the 5th international conference on synchrotron radiation instrumentation (1995)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 66 (1995), S. 1892-1894 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: A high brilliance configuration of the 2.5-GeV Photon Factory storage ring has been designed and proposed. In the new configuration, the beam emittance will be reduced to 27 nm rad, which is one-fifth of the present value (130 nm rad). The brilliance will be typically increased by a factor of 10. The beam lifetime and beam stability are discussed from a standpoint of the total effective brilliance. All of the improvements for this upgrade are being carefully designed and planned so as to be achieved (1) with minimum influence for the existing beamlines, (2) within the shortest shutdown time, and (3) at low cost. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1145816
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