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  • American Institute of Physics (AIP)  (24)
  • Springer Nature  (7)
  • Wiley-Blackwell  (7)
  • American Geophysical Union (AGU)
  • 11
    Electronic Resource
    Electronic Resource
    Permeation of implanted deuterium through Ni near room temperature (1985)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 57 (1985), S. 2733-2738 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The permeation of 2–22-keV deuterons implanted into 25-μm-thick cold-rolled Ni foils was studied near room temperature. The results are generally characterized by a time lag τ and a steady-state permeation rate J. The variation of τ with beam intensity and temperature indicates an average relative concentration of ∼4×10−4 of saturable bulk traps of binding energy 0.26±0.01 eV, plus a larger concentration of weaker traps. At the highest energy, J is well described by theory.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.335415
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  • 12
    Electronic Resource
    Electronic Resource
    Light emission from CH and H sputtered from hydrogen-implanted graphite (1988)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 52 (1988), S. 2225-2226 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Characteristic spectra of light emission from CH molecules and hydrogen atoms sputtered from hydrogen-implanted graphite are observed. The relative intensities from both species vary with the implanted fluence. The CH yield remains constant while the Hα yield increases. This is consistent with two binding states of implanted hydrogen in graphite.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.99539
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  • 13
    Electronic Resource
    Electronic Resource
    The nitrogen transport in austenitic stainless steel at moderate temperatures (2000)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 76 (2000), S. 2194-2196 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A model for the transport of nitrogen in austenitic stainless steel at temperatures around 400 °C is presented and discussed. The model considers the diffusion of nitrogen under the influence of trapping and detrapping at trap sites formed by local chromium. Nitrogen depth profiles simulated on the basis of the model with diffusion and detrapping activation energies of 1.1 and 1.45 eV, respectively, are in good agreement with experimental nitrogen profiles. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.126294
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  • 14
    Electronic Resource
    Electronic Resource
    Roughness improvement and hardness enhancement in nanoscale Al/AlN multilayered thin films (1997)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 71 (1997), S. 1951-1953 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Al/AlN multilayered thin films with periodic thickness λ less than 24 nm were developed by ion beam assisted deposition. A considerably small surface roughness comparable to that of the silicon substrate and much smaller than those of both monolithic Al and AlN films was obtained. Over the investigated range of λ, all the multilayers are harder than the homogeneous AlN film, and a significant hardness enhancement by a factor of ∼2 over that of the AlN film was observed in the multilayer with λ of 6 nm. Moreover, the hardness enhancement is not at the expense of the multilayer toughness, with the multilayer Al/AlN films showing improved plasticity as compared with the AlN film. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.119752
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  • 15
    Electronic Resource
    Electronic Resource
    Phase identification of boron nitride thin films by polarized infrared reflection spectroscopy (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 69 (1996), S. 46-48 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Six different types of boron nitride films were investigated by polarized infrared reflection spectroscopy. Films with a highly cubic, mixed cubic and noncubic, and exclusively noncubic phase composition were synthesized using ion beam assisted deposition. Additionally, postdeposition argon ion irradiated cubic and noncubic boron nitride films as well as a nitrogen implanted boron sample were analyzed. Using this technique, besides the cubic phase, two different noncubic modifications, layered anisotropic and amorphous, could be distinguished. A preferential orientation of the normal axis of the sp2-bonded basal planes parallel to the substrate surface was observed. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.118113
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  • 16
    Electronic Resource
    Electronic Resource
    Growth of low-stress cubic boron nitride films by simultaneous medium-energy ion implantation (2002)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 80 (2002), S. 55-57 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: It is demonstrated that the intrinsic stress in cubic boron nitride films can be significantly relaxed during growth by simultaneous medium-energy ion implantation. The stress in the growing film has been studied in situ using cantilever curvature measurements and has been reduced to below 2 GPa by simultaneous Ar+ or N+ ion implantation with an energy of 70 and 35 keV, respectively. The resulting cubic boron nitride films show an increased long-term stability. The results reveal that the stress in cBN is not reduced due to segregation of boron at grain boundaries. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1430268
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  • 17
    Electronic Resource
    Electronic Resource
    Mechanism of diffusional transport during ion nitriding of aluminum (2000)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 76 (2000), S. 1404-1406 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The mechanism of diffusional transport during low-energy ion nitriding of aluminum has been investigated using marker and isotope sequence techniques in connection with ion-beam analysis. For an ion energy of 1 keV and a temperature of 400 °C, it is shown that the nitride grows at the surface with aluminum being supplied by diffusion from the underlying bulk. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.126070
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  • 18
    Electronic Resource
    Electronic Resource
    On the structure of thin hydrocarbon films (1993)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 63 (1993), S. 1771-1773 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We compare reported compositions of a-C:H films in a ternary phase diagram. It is assumed that the films comprised three phases: sp3 hybridized carbon, sp2 hybridized carbon and hydrogen. The data are found to split into two well-separated groups. This separation depends on the method used to measure the sp3/sp2 ratio. We conclude from the comparison of NMR and infrared data that infrared analysis does not provide a quantitative measure of the sp3/sp2 ratio.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.110683
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  • 19
    Electronic Resource
    Electronic Resource
    Modeling of the sp3/sp2 ratio in ion beam and plasma-deposited carbon films (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 59 (1991), S. 2391-2393 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Model calculations are described which predict the fraction of tetrahedral (sp3) versus graphitic (sp2) bonding in ion beam or plasma-deposited amorphous carbon films on the basis of the preferential displacement of sp2 atoms. Displacement yields obtained from static trim simulations are used as input data for a simple analytical growing layer model of ion beam deposition. The sp3/sp2 ratio is found to increase with increasing carbon ion energy between 30 eV and 1 keV. Assuming equal probabilities for a free (implanted or displaced) atom to become trapped at either sp2 or sp3 sites results in sp3/sp2 ratios between 1 and 3.5. More refined dynamic simulations with tridyn confirm the trends with slightly lower sp3/sp2 ratios for ion beam or plasma deposition, also involving hydrogen. A decrease of the sp3/sp2 ratio towards high energies cannot be explained by preferential displacement only, in contrast to proposals in recent literature.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.106026
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  • 20
    Electronic Resource
    Electronic Resource
    Absolute density determination of CH radicals in a methane plasma (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 64 (1994), S. 971-973 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Laser-induced fluorescence was applied at the B–X transition of the CH radical to measure absolute densities of the CH radicals in an electron cyclotron resonance methane plasma. The absolute experimental uncertainty is only about 30% due to a new calibration procedure. The CH density correlates well with optical emission from the CH A–X and B–X transitions over a wide pressure range. Experimental results are in satisfactory agreement with predictions from a model based on rate equations for the electron-induced dissociation and ionization of the parent methane gas. This model also includes the interaction of the plasma species with the surrounding walls and the particle transport due to pumping.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.110949
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