ISSN:
1618-2650
Source:
Springer Online Journal Archives 1860-2000
Topics:
Chemistry and Pharmacology
Notes:
Abstract The emission of MCs+ molecular ions sputtered by Cs+ ion impact from a variety of elemental (Si and Ge) and compound (GaAs, InP, InSb, ZnSe, CdS, CdSe, CdTe and CdZnTe) semiconductors and a selection of glass samples of different composition has been investigated. For the glass samples a set of relative sensitivity factors has been determined which are largely composition-independent and provide the possibility of a reliable quantification of glasses by MCs+ SIMS. For the semiconductors fractional ion yields (i.e. the number of detected MCs+ ions per sputtered M atom) range from 10−6 to some 10−4 and exhibit little variation with the oxygen surface coverage of the specimen. Depending on M, the emission of MOCs+ molecular species becomes prominent (or even dominating) at high oxygen concentrations. Furthermore, total sputtering yields for 5.5 keV Cs+ impact and different oxygen partial pressures have been determined from sputtered craters.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1007/BF00321324
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