Publication Date:
2017-08-12
Description:
Author(s): P. Zuo, Y. Jiang, Z. G. Ma, L. Wang, B. Zhao, Y. F. Li, G. Yue, H. Y. Wu, H. J. Yan, H. Q. Jia, W. X. Wang, J. M. Zhou, Q. Sun, W. M. Liu, An-Chun Ji, and H. Chen In semiconductor physics, conventional p − n junctions are bipolar, featuring of both p - and n -type carriers ( i . e . holes and electrons). In this study, p − n junction rectification is achieved with u n i p o l a r , purely n -type (Al,In)GaN structures. This is significant, as the direct-gap group- I I I nitrides offer the most viable approach to high-frequency, high-power electronics, yet progress has been thwarted by the high resistivity of p -type GaN, which is totally absent from the authors’ device. Furthermore, their approach can be used for other strongly polarized semiconductors, such as ZnO. [Phys. Rev. Applied 8, 024005] Published Wed Aug 09, 2017
Electronic ISSN:
2331-7019
Topics:
Physics
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