ALBERT

All Library Books, journals and Electronic Records Telegrafenberg

feed icon rss

Your email was sent successfully. Check your inbox.

An error occurred while sending the email. Please try again.

Proceed reservation?

Export
  • 1
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 71 (1992), S. 3414-3418 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Polycrystalline chalcopyrite AgInS2 films 2.0–3.5 μm thick have been formed on glass substrates. Resistivities, carrier concentrations, and Hall mobilities are measured at room temperature. These quantities are shown to be changed greatly by annealing under maximum S pressure for 1 h at different temperatures. Resistivities of 1–104 Ω cm and carrier concentrations of 2×1015–3×1020 cm−3 are obtained in n-type films. In p-type films, resistivities are found to be higher than 1×104 Ω cm, and carrier concentrations are less than 3×1015 cm−3. The effects of vacancies and interstitials of Ag, In, and S atoms are discussed to explain the observed changes in the electrical properties of the films. Owing to various structural imperfections, Hall mobilities are found to be less than 2 cm2/V s in both n- and p-type films. Au-p-type AgInS2 Schottky diodes have been fabricated. The current–voltage (I–V) and capacitance–voltage (C–V) characteristics are measured at room temperature. The ideality factor is evaluated as about 1.63. In the frequency range 10−4–1 MHz, large frequency dispersion is observed in the C–V curves, and explained in terms of the response of deep defect levels.
    Type of Medium: Electronic Resource
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
  • 2
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 3846-3851 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: This article presents a method for investigating the diffusion of photocarriers in semiconductors by the analysis of phase shift between a temporally modulated illumination grating and its inducing photocurrent. Experiments on hydrogenated amorphous silicon prove that an accurate measurement of the diffusion length as well as an identification of ambipolar or nonambipolar diffusion can be acquired by using this technique.
    Type of Medium: Electronic Resource
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
  • 3
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 72 (1992), S. 3186-3193 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Photocurrent multiplication has been observed in a hydrogenated amorphous silicon-based p-i/a-SiN:H/i-n structure junction under a reverse biased condition. A systematic investigation on the photocurrent characteristics in this junction system has been carried out. It has been shown from the analysis of the results that multiplication arises from the interband tunneling injection of valence band "electron'' through the a-SiN:H barrier layer. A device modeling on the basis of the experimental data permits us to design the device structure for achieving better performances. As a preliminary optimization of device structure, an external quantum efficiency exceeding 70 has been obtained under the operation voltage 30 V in the heterojunction photodiode having an a-SiN:H (thickness of 40 nm with optical energy gap 2.1 eV) at the p a-SiC:H/i a-Si:H interface. The proposed highly sensitive photomultiplier device might have a wide variety of application fields such as a solid-state imager for high-definition televisions, etc.
    Type of Medium: Electronic Resource
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
  • 4
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 69 (1991), S. 3130-3134 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The electrical properties of n-type InP metal-insulator-semiconductor (MIS) structures have been investigated. As gate insulators, InPxOy layers are formed by a new method. In the method, a Px'Oy' layer is deposited on InP by evaporation of P2O5 powder. The reaction between the Px'Oy' layer and InP substrate yields an InPxOy layer. The InPxOy layers 500–1450 A(ring) thick exhibit high resistivities ρ and low dielectric dissipations D, i.e., ρ≈2×1015 Ω cm and D≤0.01 in the frequency range 0.02–100 kHz at room temperature. The hysteresis in the capacitance-voltage curves of a typical InP MIS structure is found to be less than 0.6 V and an ion-drift type. The interfacial properties of InP MIS structures are shown to be well explained by the statistical model in the conductance method. A typical value of the minimum surface state density is evaluated as 3.3×1011 cm−2 eV−1 at about 0.26 eV below the conduction-band edge. The distribution of the electron capture cross sections σ of surface states is also obtained, e.g., σ=1.6×10−16 cm2 at 0.4 eV below the conduction-band edge.
    Type of Medium: Electronic Resource
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
  • 5
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 69 (1991), S. 1506-1509 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The electrical properties of n-type InSb metal-insulator-semiconductor (MIS) structures have been investigated. As gate insulators, SiInxPyOz layers are formed on InSb by a new method. In the method, an In-SiOx' double layer is formed on the InSb (111)B surface by evaporation of SiO and In. Further, a Py'Oz' layer is deposited on the double layer. The reaction between a Py' Oz' layer and In-SiOx' double layer yields a SiInxPyOz layer. The SiInxPyOz layers exhibit high resistivities ρ, i.e., ρ≈6.5× 1015 Ω cm at 100 K and 1.0×1014 Ω cm at room temperature. The hysteresis in the capacitance-voltage (C-V) and conductance-voltage (G-V)curves of InSb MIS structures at 100 K is found to be less than 0.6 V and an injection type. The surface-state density in the MIS interface is evaluated by including the effects of the nonparabolicity of the conduction band and Fermi–Dirac statistics for electrons in InSb. A typical value of the minimum surface state density is observed as 8.3× 1011 cm−2 eV−1 at about 0.05 eV below the conduction-band edge. Further, the C-V characteristics of InSb MIS structures at room temperature are discussed by including the features of the narrow band-gap semiconductor.
    Type of Medium: Electronic Resource
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
  • 6
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Physics of Plasmas 3 (1996), S. 1935-1942 
    ISSN: 1089-7674
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A series of detailed experiments has been conducted in three laboratory plasma devices to measure the dynamo electric field along the equilibrium field line (the α effect) arising from the correlation between the fluctuating flow velocity and magnetic field. The fluctuating flow velocity is obtained from probe measurement of the fluctuating E×B drift and electron diamagnetic drift. The three major findings are the following: (1) The α effect accounts for the dynamo current generation, even in the time dependence through a "sawtooth'' cycle; (2) at low collisionality the dynamo is explained primarily by the widely studied pressureless magnetohydrodynamic (MHD) model, i.e., the fluctuating velocity is dominated by the E×B drift; (3) at high collisionality, a new "diamagnetic dynamo'' is observed, in which the fluctuating velocity is dominated by the electron diamagnetic drift. In addition, direct measurements of the helicity flux indicate that the dynamo activity transports magnetic helicity from one part of the plasma to another, but the total helicity is roughly conserved, verifying Taylor's [Phys. Rev. Lett. 33, 1139 (1974); Rev. Mod. Phys. 58, 741 (1986)] conjecture. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
  • 7
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 2841-2850 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A novel spectroscopy technique based on modulated photoconductivity measurements with varying illumination level has been applied to investigate the capture coefficients and the energy distribution of defect states in undoped amorphous silicon. From the experimental data, charged and neutral defect distributions are clearly resolved according to their own capture coefficients. The carrier capture process as well as the defect formation mechanism are both quantitatively discussed.
    Type of Medium: Electronic Resource
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
  • 8
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 51 (1987), S. 1259-1261 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The in-plane diffusion coefficient and lifetime of photogenerated carriers in amorphous silicon have been measured by the transient grating technique in amorphous silicon (a-Si)/silicon carbide (a-SiC) multilayered structures, as a function of the a-Si well layer thickness. As the layer thickness is decreased, the diffusion coefficient gradually decreases, while the lifetime drastically increases by more than one order of magnitude than that in thick unlayered a-Si. These behaviors suggest that the carrier transport is determined both by carrier interaction with shallow traps at a-Si/a-SiC interfaces and by quantum-size effect through weakened carrier coupling with deep states.
    Type of Medium: Electronic Resource
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
  • 9
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 55 (1989), S. 763-765 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The interband optical transition in quantum wells of hydrogenated amorphous silicon and silicon carbide has been studied by using electroabsorption (EA) spectroscopy. The observed EA spectrum exhibits a triangular line shape, identified as being due to a field-induced modification of the subband transition. The identification is confirmed by comparing with the experimental result of thermoabsorption spectroscopy.
    Type of Medium: Electronic Resource
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
  • 10
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 53 (1988), S. 2170-2172 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Wavelength-differential absorption spectroscopy has been applied to amorphous silicon ultrathin single layers. The derivative spectra clearly show a step-like behavior for the layer of the thickness below 40 A(ring), indicating a splitting of the valence and conduction bands into a series of the subbands. Analysis of the observed energy shifts of subband transitions in terms of a one-dimensional quantum well model leads to the conclusion that the electron effective mass is less than 0.48m0, where m0 denotes free-electron mass.
    Type of Medium: Electronic Resource
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
Close ⊗
This website uses cookies and the analysis tool Matomo. More information can be found here...