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  • American Institute of Physics (AIP)  (11)
  • American Geophysical Union  (8)
  • 1
    Electronic Resource
    Electronic Resource
    Optical band gap of the α−mercuric iodide (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 5822-5823 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We investigate by photoacoustic spectroscopy the optical band-gap energy of mercuric iodide, α-HgI2, grown by sublimation in a sealed ampoule. Due to its importance as a detector material operating at ambient temperature, the physical properties of α-HgI2 have been recently studied. We found, by two different methods, the band-gap energies EG=2.32 and 2.39 eV, respectively. These results are in good agreement with recent measurements based on reflection and absorption spectra. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.359646
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  • 2
    Electronic Resource
    Electronic Resource
    Optical determination of the direct bandgap energy of lead iodide crystals (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 69 (1996), S. 1930-1932 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The optical bandgap energy of lead iodide PbI2, grown by Bridgman's method, is obtained by photoacoustic spectroscopy. Due to its potential applications, as a room temperature, semiconductor material detector, which may be used as a photocell, or as a x- and γ-ray radiation detector, the physical properties of PbI2 have attracted much attention. We computed, by different methods the bandgap energy. We found the energy in a range 2.301±0.038≤〈Eg〉≤2.359±0.037 eV. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.117625
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  • 3
    Electronic Resource
    Electronic Resource
    Influence of thermal annealings in different atmospheres on the band-gap shift and resistivity of CdS thin films (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 2204-2207 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We study by photoacoustic spectroscopy the band-gap shift effect of CdS films. The CdS films were grown by chemical bath deposition and exposed to different annealing atmospheres over a range of temperature in which the sample structure changes. We show the band-gap evolution and resistivity as a function of temperature of thermal annealing and determine the process that produces the best combination of high band-gap energy and low resistivity. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.360136
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  • 4
    Electronic Resource
    Electronic Resource
    Theoretical electronic properties of silicon-containing bismuth (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 5249-5252 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The electrical conductivities of n-doped silicon and, in particular Si:Bi, have been investigated for doping levels greater than the impurity critical concentration Nc for the metal-nonmetal transitions. A general feature of the conductivity for concentration normalized to Nc is presented in the order σ(Bi)(approximately-greater-than)σ(As)(approximately-greater-than)σ(P)(approximately-greater-than)σ(Sb). For Si:Bi, the value of Nc is calculated for different criteria. The mobility of electrons presents a lower value compared to Si:P. The results for Si:P and Si:As are compared to the experimental data available in the literature.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.357175
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  • 5
    Electronic Resource
    Electronic Resource
    Electrical resistivity of bismuth implanted into silicon (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 3453-3455 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We investigate the electrical properties of Bi-doped Si samples, prepared by ion implantation, in a range of concentrations around and above the metal–nonmetal transition. Comparison between experimental and theoretical values of the resistivity brought out that in these samples a similar behavior is observed as for other n-doped Si, thus confirming the results obtained in the same range of impurity concentration, i.e., ρ(Sb)≤ρ(P)≤ρ(As)≤ρ(Bi). © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.361393
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  • 6
    Electronic Resource
    Electronic Resource
    Planar array of superheated superconductors: An improved superheated superconducting granule detector (1990)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 56 (1990), S. 2234-2236 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have invented a new superheated superconducting granule detector which is a prime candidate for sensing dark matter and which could prove very useful for other applications. The sensor element is a planar array of spherical granules for which the spread in transition temperatures is nearly an order of magnitude smaller than that for a colloidal device. The detecting efficiency for low-energy deposition is thereby significantly increased. Preliminary results are described.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.102953
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  • 7
    Electronic Resource
    Electronic Resource
    Band-gap shift in CdS semiconductor by photoacoustic spectroscopy: Evidence of a cubic to hexagonal lattice transition (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 64 (1994), S. 291-293 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The band-gap energies of the CdS semiconductor are obtained by a photoacoustic spectroscopy (PAS) technique over a range of temperature of thermal annealing (TTA), in which the evolution of the sample structure is characterized by x-ray diffraction patterns. The PAS experiment gives a set of data for the band-gap shift in the region of the fundamental absorption edge. With increasing TTA the band-gap shift increases up to a critical TTA when its slope decreases in a roughly symmetrical way. It is suggested that at this temperature a cubic to hexagonal-lattice transition occurs.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.111184
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  • 8
    Electronic Resource
    Electronic Resource
    Highly accurate relativistic universal Gaussian basis set: Dirac–Fock–Coulomb calculations for atomic systems up to nobelium (1994)
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 101 (1994), S. 6829-6833 
    Details
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: A universal Gaussian basis set is developed that leads to relativistic Dirac–Fock SCF energies of comparable accuracy as that obtained by the accurate numerical finite-difference method (GRASP2 package) [J. Phys. B 25, 1 (1992)]. The Gaussian-type functions of our universal basis set satisfy the relativistic boundary conditions associated with the finite nuclear model for a finite speed of light and conform to the so-called kinetic balance at the nonrelativistic limit. We attribute the exceptionally high accuracy obtained in our calculations to the fact that the representation of the relativistic dynamics of an electron in a spherical ball finite nucleus near the origin in terms of our universal Gaussian basis set is as accurate as that provided by the numerical finite-difference method. Results of the Dirac–Fock–Coulomb energies for a number of atoms up to No (Z=102) and some negative ions are presented and compared with the recent results obtained with the numerical finite-difference method and geometrical Gaussian basis sets by Parpia, Mohanty, and Clementi [J. Phys. B 25, 1 (1992)]. The accuracy of our calculations is estimated to be within a few parts in 109 for all the atomic systems studied.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.468311
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  • 9
    Electronic Resource
    Electronic Resource
    A generator coordinate version of the closed-shell Dirac–Fock equations (1996)
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 104 (1996), S. 6278-6285 
    Details
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: A generator coordinate version of the Dirac–Fock equations for relativistic closed-shell atoms is presented. The integration of the Dirac–Fock equations is performed through the integral discretization technique so as to preserve the continuous character of the generator coordinate formalism. With the new formalism we generate a universal Gaussian basis set for relativistic closed-shell atoms with d and f orbitals (zinc up to nobelium). The results obtained with the universal Gaussian basis set for Dirac–Fock–Coulomb self-consistent-field energies are compared with numerical-finite-difference results and Dirac–Fock–Coulomb energies obtained by using other Gaussian basis sets. The excellent performance of our universal Gaussian basis set is attributed to the integral discretization technique of the generator coordinate Dirac–Fock method, as with it we are capable of generating Gaussian-type function exponents that are able to represent properly the relativistic kinematics of an electron inside the nucleus. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.471288
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  • 10
    Electronic Resource
    Electronic Resource
    On the inclusion of the Breit interaction term in the closed-shell generator coordinate Dirac–Fock formalism (1996)
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 105 (1996), S. 5503-5509 
    Details
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: The generator coordinate Dirac–Fock formalism with the inclusion of the frequency-independent Breit interaction term is presented. The integration of the Dirac–Fock equations is performed through an integral discretization technique in order to preserve the continuous character of the original generator coordinate formalism. The inclusion of the Breit interaction term in the generator coordinate Dirac–Fock formalism is assessed through Dirac–Fock–Breit calculations for the relativistic closed-shell atoms with d and f orbitals, i.e., from zinc (Z=30) up to nobelium (Z=102), by using a universal Gaussian basis set generated previously by employing the generator coordinate Dirac–Fock method. The Dirac–Fock–Breit energy results presented in this work are the best, so far, obtained for the relativistic closed-shell atoms from Zn (Z=30) through No (Z=102) by using Gaussian-type functions, and show the efficacy of the generator coordinate Dirac–Fock method in performing accurate Dirac–Fock–Breit calculations. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.472390
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