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  • 1
    Electronic Resource
    Electronic Resource
    Temporal and frequency responses of p-n HgCdTe photodiodes (1981)
    Springer
    Optical and quantum electronics 13 (1981), S. 147-152 
    Details
    ISSN: 1572-817X
    Source: Springer Online Journal Archives 1860-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: Abstract Theoretical expressions for the high-frequency behaviour of a p-n photodiode, limited by theRC-time constant and the diffusion time to the junction, are given. Comparisons with temporal and frequency response measurements on an HgCdTe photodiode have been performed. The good agreement between theoretical and experimental data suggests that this type of high-mobility semiconductor photodiode can be described using the derived model, in which a constant, saturated diffusion velocity is assumed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00612747
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  • 2
    Electronic Resource
    Electronic Resource
    GHz optical communication experiments using lead-salt laser diodes in the 3.5–5.5μm wavelength region (1987)
    Springer
    Optical and quantum electronics 19 (1987), S. 313-317 
    Details
    ISSN: 1572-817X
    Source: Springer Online Journal Archives 1860-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: Abstract The modulation performance of lead-salt laser diodes suitable for mid-infrared fibre optic communication systems has been investigated. The electron and photon lifetime for a PbCdS laser have been determined to 3.1 ns and 3.3 ps, respectively. Moreover, an experiment using short lengths of fluoride fibres shows the feasibility of GHz fibre optic communication links in the mid-infrared region using lead-salt lasers if the potential ultra-low loss of mid-infrared optical fibres can be realized.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF02032689
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  • 3
    Electronic Resource
    Electronic Resource
    An XPS study of dispersion and valence state of TiO2 supported vanadium oxide catalysts (1990)
    Springer
    Catalysis letters 7 (1990), S. 351-358 
    Details
    ISSN: 1572-879X
    Keywords: XPS ; ESCA ; V2O5/TiO2 catalysts ; V valence state ; V2O5 dispersion
    Source: Springer Online Journal Archives 1860-2000
    Topics: Chemistry and Pharmacology
    Notes: Abstract “Monolayer” vanadium species are mainly in the V(V) valence state, but with XPS a small fraction of V4+ species are identified. Prolonged analysis treatment increases the V4+ concentration. With increasing vanadium concentration, a monolayer coverage corresponding to 1 mg V2O5 per m2 develops, and it contains additional layers with a thickness of about 250 Å at 4 mg V2O5 per m2, covering 3% of its surface area.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00764924
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  • 4
    Electronic Resource
    Electronic Resource
    Morphological stability in epitaxy of semiconductors — application to optoelectronic monolithically integrated structures (1986)
    Springer
    Applied physics 41 (1986), S. 243-252 
    Details
    ISSN: 1432-0630
    Keywords: 68.55 ; 81.10 ; 85.60
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract A simple selection rule for epitaxial growth techniques, which is based on morphological stability of the substrate surface is proposed. According to this rule a certain growth technique should be used for preparing a specific device structure of a three-dimensional monolithically integrated optical or electronic circuit. The formulae for morphological stability functions for LPE, MO, VPE, and MBE growth techniques are given. Calculations performed for the GaAs/Al x Ga1−x As material system by using the linear morphological stability theory of Mullins and Sekerka suggest that from the point of view of morphological stability the most suitable growth technique for fabrication of three-dimensional monolithically integrated optical and electronic device structures is the MBE technique.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00616846
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  • 5
    Electronic Resource
    Electronic Resource
    Exciton line broadening in strained InGaAs/GaAs single quantum wells (1995)
    Springer
    Applied physics 60 (1995), S. 243-245 
    Details
    ISSN: 1432-0630
    Keywords: 78.65 ; 73.40. L4
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract We report the first observation of well-resolved exciton peaks in the room-temperature absorption spectrum of the strained In0.20Ga0.80As/GaAs Single Quantum-Well (SQW) structure. The best fit of the exciton resonances gives the conduction-band offset ratioQ c=0.70±0.05. The strength of the exciton-phonon coupling is determined from linewidth analysis and is found to be much larger than that of strained InGaAs/GaAs MQW structures.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF01538398
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  • 6
    Electronic Resource
    Electronic Resource
    Exciton line broadening in strained InGaAs/GaAs single quantum wells (1995)
    Springer
    Applied physics 60 (1995), S. 243-245 
    Details
    ISSN: 1432-0630
    Keywords: PACS: 78.65; 73.40. L4
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract . We report the first observation of well-resolved exciton peaks in the room-temperature absorption spectrum of the strained In0.20Ga0.80As/GaAs Single Quantum–Well (SQW) structure. The best fit of the exciton resonances gives the conduction-band offset ratio Q c=0.70±0.05. The strength of the exciton–phonon coupling is determined from linewidth analysis and is found to be much larger than that of strained InGaAs/GaAs MQW structures.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF01538398
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  • 7
    Electronic Resource
    Electronic Resource
    Electron tunneling between two-dimensional electronic systems in a heterostructure with a single doped barrier (1998)
    Springer
    Semiconductors 32 (1998), S. 539-543 
    Details
    ISSN: 1063-7826
    Source: Springer Online Journal Archives 1860-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: Abstract Electron tunneling in a heterostructure with a single doped barrier was investigated. Analysis of the experimental data showed that all features in the tunneling conductance are due to electron tunneling between two-dimensional electron sheets which appear on different sides of the barrier as a result of ionization of impurities in the barrier. Electron transport between the two-dimensional electron sheets and three-dimensional contact regions does not introduce significant distortions in the measured tunneling characteristics. In such structures there is no current flow along the two-dimensional electron gas; such a current ordinarily makes it difficult to investigate tunneling between two-dimensional electronic systems in magnetic fields.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1134/1.1187434
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  • 8
    Electronic Resource
    Electronic Resource
    Tunneling resonances in structures with a two-step barrier (1998)
    Springer
    JETP letters 67 (1998), S. 863-868 
    Details
    ISSN: 1090-6487
    Keywords: 73.40.Kp ; 73.20.Dx
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Notes: Abstract Electron transport through an asymmetric heterostructure with a two-step barrier N+GaAs/N−GaAs/Al0.4Ga0.6As/Al0.03Ga0.97As/N−GaAs/N+GaAs was investigated. Features due to resonance tunneling both through a size-quantization level in a triangular quantum well, induced by an external electric field in the region of the bottom step of the barrier (Al0.03Ga0.97As layer), and through virtual levels in two quantum pseudowells of different width are observed in the tunneling current. The virtual levels form above the bottom step or above one of the spacers (N−GaAs layer) as a result of interference of electrons, in the first case on account of reflection from the Al0.4Ga0.6As barrier and a potential jump at the Al0.03Ga0.97As/N−GaAs interface and in the second case — from the Al0.4Ga0.6As barrier and the potential gradient at the N−GaAs/N+GaAs junction, reflection from which is likewise coherent.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1134/1.567762
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  • 9
    Electronic Resource
    Electronic Resource
    Suppression of the equilibrium tunneling current between slightly disordered two-dimensional electron systems with different electron concentrations in a high magnetic field (1999)
    Springer
    JETP letters 69 (1999), S. 255-261 
    Details
    ISSN: 1090-6487
    Keywords: 71.10.Ca ; 73.50.Jt
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Notes: Abstract Tunneling between parallel two-dimensional electron gases (2DEG) in accumulation layers formed on both sides of the single doped AlGaAs barrier are examined in both zero and high magnetic field. Accumulation layers are separated from highly n-doped contact regions which freely supply electrons to the 2DEGs via 80 nm thick lightly n-doped spacer layers. Strongly oscillating current with magnetic field along the 2DEGs is absent in this arrangement. Without magnetic field resonant tunneling between 2DEGs with different as grown electron concentration could be settle by application of external voltage bias. High magnetic fields (ν〈1) shift resonant tunneling to zero external bias and suppresses tunneling current, creating wide gap in the tunneling density of states at the Fermi level arisen from the in-plane Coulomb interaction in the 2DEGs.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1134/1.568014
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  • 10
    Electronic Resource
    Electronic Resource
    Lack of effect of omeprazole, cimetidine, and ranitidine on the pharmacokinetics of ethanol in fasting male volunteers (1992)
    Springer
    European journal of clinical pharmacology 42 (1992), S. 209-212 
    Details
    ISSN: 1432-1041
    Keywords: Ethanol ; gastric acid inhibition ; pharmacokinetics ; antisecretory drugs ; omeprazole ; ranitidine ; cimetidine
    Source: Springer Online Journal Archives 1860-2000
    Topics: Chemistry and Pharmacology , Medicine
    Notes: Summary The effects of three gastric antisecretory drugs on the pharmacokinetics of ethanol have been studied in a randomized crossover experiment. Male medical students (n=12) took ethanol 0.8 g/kg body weight at 08.00 h after an overnight fast. On seven successive days before drinking ethanol they were given omeprazole 20 mg, cimetidine 800 mg, ranitidine 300 mg, or no drug, with a period of at least 7 days between treatments. The peak blood ethanol concentration of 21.9 to 22.8 mmol·l−1 occurred at 64 to 70 min after the end of drinking. The rate of disappearance of ethanol from the blood ranged from 3.0 to 3.3 mmol·l−1·h−1 and the rate of removal from the whole body ranged from 8.0 to 8.5 g·h−1. The apparent volume of distribution of ethanol was almost the same for all four treatments: mean 0.68 l·kg−1, corresponding to a mean total body water of 441 (59% body weight). Mean areas under the concentration-time profiles of ethanol ranged from 83 to 87 mmol·l−1·h for the four treatments. It is concluded that omeprazole, cimetidine and ranitidine do not alter the kinetics of a moderate dose of ethanol.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00278486
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