Publication Date:
2018-07-17
Description:
Author(s): G. Knebl, P. Pfeffer, S. Schmid, M. Kamp, G. Bastard, E. Batke, L. Worschech, F. Hartmann, and S. Höfling We study the optical tunability of the charge carrier type in InAs/GaSb double quantum wells with its type-II broken band alignment and inverted band structure. Under constant optical excitation, the majority charge carrier type switches from electron to hole. Within the majority charge carrier type... [Phys. Rev. B 98, 041301(R)] Published Mon Jul 16, 2018
Keywords:
Semiconductors II: surfaces, interfaces, microstructures, and related topics
Print ISSN:
1098-0121
Electronic ISSN:
1095-3795
Topics:
Physics
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