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  • 1
    Electronic Resource
    Electronic Resource
    Minimal model for transport barrier dynamics based on ion-temperature-gradient turbulence (1997)
    [S.l.] : American Institute of Physics (AIP)
    Physics of Plasmas 4 (1997), S. 3262-3272 
    Details
    ISSN: 1089-7674
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Low-order mode coupling equations are derived to describe recent computer simulations of the toroidal ion-temperature-gradient turbulent convection with steady and pulsating sheared mass flows in the transport barrier zone. The three convective transport states are identified with the tokamak confinement regimes called low mode (L-mode), high mode (H-mode), and barrier localized modes (BLMs) when the transport barrier is in the core plasma. The L-mode limit cycle is analytically derived and a bifurcation diagram showing L to H and H to BLM transitions in confinement is constructed numerically. Markovian closure procedures are sought to further reduce the dimensionality of the nonlinear system. First an exact expression is given for the energy transfer rate from the fluctuations to the sheared mass flow through the triplet velocity correlation function. Then the time scale expansion required to derive the Markovian closure formula is given. Markovian closure formulas form the basis for the thermodynamic-like L–H bifurcation models. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.872467
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  • 2
    Electronic Resource
    Electronic Resource
    Turbulent transport in mixed states of convective cells and sheared flows (1996)
    [S.l.] : American Institute of Physics (AIP)
    Physics of Plasmas 3 (1996), S. 2912-2923 
    Details
    ISSN: 1089-7674
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Low-order mode coupling equations are used to describe recent computer simulations of resistive-g turbulent convection that show bifurcations for the onset of steady and pulsating sheared mass flows. The three convective transport states are identified with the tokamak confinement regimes called low-mode (L-mode), high-mode (H-mode), and edge-localized modes (ELMs). The first bifurcation (L→H) and the second bifurcation (H→ELMs) conditions are derived analytically and compared with direct solutions of the 6-ODE mode coupling equations. First an exact expression is given for the energy transfer rate from the fluctuations to the sheared mass flow through the triplet velocity correlation function. Then the time scale expansion required to derive the Markovian closure formula is given. Markovian closure formulas form the basis for the thermodynamic-like L–H models used in several recently proposed models. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.871651
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  • 3
    Electronic Resource
    Electronic Resource
    Electronic conductivity of hydrogenated nanocrystalline silicon films (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 3945-3948 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A heteroquantum-dots (HQD) model for hydrogenated nanocrystalline silicon films (nc-Si:H) is proposed. The main features of our model are as follows. (i) the nanocrystalline grains and the amorphous counterparts in which they are embedded have very different band gap and band structures. As a result, they form heterojunctionlike structures in the interface regions, where the band offset effects dramatically reduce the activation energy and the grains act like quantum dots. (ii) In the presence of an external field, the activated electrons in the quantum dots conduct via quantum tunneling through the interface barriers. By means of the HQD model, we have identified the conduction of nc-Si:H as a thermal-assisted tunneling process. Our results show that there are two distinct regimes for the conductivity of nc-Si:H: (i) the low-temperature regime, where there is a simple activation energy ΔE; (ii) the high-temperature regime, where ΔE is effectively enhanced by the temperature effect of the electronic tunneling in the nanoscale particles. The theory is in good agreement with the experiments. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.359914
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  • 4
    Electronic Resource
    Electronic Resource
    The structure and properties of nanosize crystalline silicon films (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 75 (1994), S. 797-803 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Nanosize crystalline silicon films are fabricated by using highly hydrogen-diluted silane as the reactive gas and activated with rf+dc double-power sources, in a conventional plasma-enhanced chemical-vapor-deposition system. The structure of the deposited films as studied by means of high-resolution electron microscopy, Raman scattering spectra, x-ray-diffraction pattern, IR transmission spectra, and ultraviolet ray analysis. The results show that there are many novel structural features and new physical properties for these nanosize crystalline silicon films. In particular, it is found that the optical-absorption coefficient α is higher than that of a-Si:H and μc-Si:H films, the room-temperature conductivity σd has the value of 10−3–10−1 Ω−1 cm−1, and the hydrogen content CH in nc-Si:H films is higher than 30 at. %. The nc-Si:H films have their peculiar features which are different from both a-Si:H and μc-Si:H films.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.356432
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  • 5
    Electronic Resource
    Electronic Resource
    Effect of stray capacitances on single electron tunneling in a turnstile (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 80 (1996), S. 1526-1531 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Based on the exact solution for the potential profile of the 2N turnstile with equal junction capacitances C, equal stray capacitances C0, and a coupling capacitance Cc, we obtain explicit expressions for the Gibbs free energy as well as the corresponding charging energy and the barrier height. In particular, we analyze the effects of the stray capacitances on the turnstile operation. In the C0=0 case, our results for the turnstile operation reduce to those of D. V. Averin, A. A. Odintsov, S. V. Vyshenskii [J. Appl. Phys. 73, 1297 (1993)]. In general, when C0/C is increased, the operable region of the turnstile decreases. Thus, in order to have a high quality turnstile, it is necessary to keep the stray capacitances small. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.362947
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  • 6
    Electronic Resource
    Electronic Resource
    Slanted coupling of one-dimensional arrays of small tunnel junctions (1998)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 84 (1998), S. 6713-6717 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have studied the electrostatic problem of the slanted coupling of two one-dimensional (1D) arrays with equal junction capacitances C, equal stray capacitances Co, equal coupling capacitances Cc, and with both arrays biased. In the weak coupling limit (Cc/C(very-much-less-than)1), we obtain an analytic solution for the potential profile and the corresponding Gibbs free energy, and we derive threshold voltages for various charge transport modes. Our results show that C0, Cc, and the bias voltage V1 all play important roles in determining the threshold voltage of the system. In the small stray capacitance limit (C0/C(very-much-less-than)1), the threshold voltage is proportional to 1/C, while in the large stray capacitance limit (C0/C(very-much-greater-than)1), the threshold voltage becomes independent of C. Also, in the small Cc/C limit, single electron tunneling always has a lower threshold voltage than that of the electron-hole and mixed tunneling. In addition, we find that V1 has a more dramatic effect on the electron-hole tunneling threshold voltage than on that of the single electron tunneling, i.e., at some favored value of Cc/C a small change in V1 can switch the transport of the system from single electron to electron-hole transport. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.368997
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  • 7
    Electronic Resource
    Electronic Resource
    Resonant band-f scattering and the magnetic properties of highly correlated actinide systems (1987)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 61 (1987), S. 3385-3387 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: To understand the magnetic properties of moderately delocalized light actinide (uranium, neptunium, plutonium) systems, it is necessary to treat correctly the way in which the highly correlated behavior of the f electrons within the actinide ion is linked to the non-f band behavior via the hybridization process. We do this by transforming the hybridization into band-f resonant scattering. We have successfully applied the theory to PuSb by considering both dominant and next-to-dominant scattering channels.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.338780
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  • 8
    Electronic Resource
    Electronic Resource
    In-plane uniaxial magnetic anisotropy of cobalt-doped Y3Fe5O12 epitaxial films (1999)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 74 (1999), S. 3026-3028 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have grown magnetically harder single-crystalline thin films of Y3Fe5O12 doped with Co2+ on (110)-oriented Ga3Gd5O12 substrates. Ge4+ and Ce4+ have been substituted to compensate for the charge differential between Co2+ and Fe3+. These garnet films, prepared using pulsed-laser deposition, exhibit excellent crystallinity as determined from x-ray diffraction and Rutherford backscattering spectroscopy. The addition of Co2+ in Y3Fe5O12 films enhances the in-plane uniaxial anisotropy over an order of magnitude, depending on composition. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.124053
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  • 9
    Electronic Resource
    Electronic Resource
    Effects of a Bi4Ti3O12 buffer layer on SrBi2Ta2O9 thin films prepared by the metalorganic decomposition (1999)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 74 (1999), S. 3711-3713 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Ferroelectric SrBi2Ta2O9 thin films have been deposited on the Bi4Ti3O12 buffered Pt/Ti/SiO2/Si substrates using the metalorganic decomposition technique at annealing temperatures ranging from 600 to 750 °C. No pyrochlore phase was found in the SrBi2Ta2O9 thin films although the Bi2Ti2O7 phase appeared in the Bi4Ti3O12 buffer layers. A SrBi2Ta2O9 film with (200) predominant orientation was formed at 650 °C. The effects of the Bi4Ti3O12 buffer layer and post-annealing temperature on the structure, surface morphology, and electrical properties of SrBi2Ta2O9 thin films were analyzed. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.123229
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  • 10
    Electronic Resource
    Electronic Resource
    Erratum: "Structure control and characterization of SrBi2Ta2O9 thin films by a modified annealing method" [Appl. Phys. Lett. 74, 1221 (1999)] (1999)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 75 (1999), S. 2151-2151 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.124947
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