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  • American Institute of Physics  (87)
  • Copernicus  (77)
  • EDP Sciences  (67)
  • American Chemical Society  (59)
  • American Institute of Physics (AIP)  (16)
  • 1
    Electronic Resource
    Electronic Resource
    s.l. : American Chemical Society
    The @journal of physical chemistry 〈Washington, DC〉 54 (1950), S. 185-204 
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology , Physics
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 71 (1992), S. 907-915 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Strained layer superlattices of wurtzite CdS/CdSe have been grown on (111)A GaAs substrates by metalorganic chemical vapor deposition and their optical properties studied by photoluminescence spectroscopy. It is shown that the superlattice layers contain giant strain-induced piezoelectric fields exceeding 2×108 V m−1. These fields are similar to those reported for (111) orientated III–V superlattices, but an order of magnitude greater. The recombination energies from a series of samples provide evidence for a type II conduction band offset of 0.23±0.10 eV (the electron wells being in the CdS), with the band structure heavily modified by the internal electric fields. In addition, the photoluminescence peak emission energy shows a strong dependence on the excitation power. This is interpreted as further evidence for the effect of internal fields. We conclude that this system shows new effects not previously observed in II–VI compound superlattices. The large band-gap tunability and the space-charge effects offer possibilities for all-optical switching devices in the 700–1300-nm region of the spectrum.
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 91 (2002), S. 4326-4334 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have studied the magnitude and length scale of potential fluctuations in the channel of metal–oxide–semiconductor field-effect transistors due to the random positions of ionized impurities in the depletion layer. These fluctuations effect the threshold voltage of deep submicron devices, impede their integration, and reduce yield and reliability. Our simple, analytic results complement numerical, atomistic simulations. The calculations are based on a model introduced by Brews to study fluctuations due to charges in the oxide. We find a typical standard deviation of 70 mV in the potential below threshold, where the channel is empty, falling to 40 mV above threshold due to screening by carriers in the channel. These figures can be reduced by a lightly doped epitaxial layer of a few nm thickness. The correlation function decays exponentially in an empty channel with a length scale of 9 nm, which screening by carriers reduces to about 5 nm. These calculations of the random potential provide a guide to fluctuations of the threshold voltage between devices because the length of the critical region in a well-scaled transistor near threshold is comparable to the correlation length of the fluctuations. The results agree reasonably well with atomistic simulations but detailed comparison is difficult because half of the total standard deviation comes from impurities within 1 nm of the silicon–oxide interface, which is a single layer of the grid used in the simulations. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 4
    Electronic Resource
    Electronic Resource
    College Park, Md. : American Institute of Physics (AIP)
    Journal of Mathematical Physics 30 (1989), S. 1117-1121 
    ISSN: 1089-7658
    Source: AIP Digital Archive
    Topics: Mathematics , Physics
    Notes: It is shown that intermediate statistics do not correspond to any physical process. The stationary probability distributions of intermediate statistics are not compatible with any mechanism which allows a variation between Fermi–Dirac and Bose–Einstein statistics. The binomial and negative binomial distributions, characterizing Fermi–Dirac and Bose–Einstein statistics, respectively, transform into the Poisson distribution, descriptive of classical statistics, as the number of energy cells increases without limit. These distributions are shown to be the laws of error leading to the average value as the most probable value.
    Type of Medium: Electronic Resource
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  • 5
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Physics of Plasmas 7 (2000), S. 4291-4302 
    ISSN: 1089-7674
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A stability analysis is made of an electron beam, propagating along and gyrating about a uniform magnetic field, for the case of a spatiotemporal equilibrium distribution in the phase angle of the transverse electron momentum component. The axial momentum component and the magnitude of the transverse momentum component are assumed to have definite values in the equilibrium distribution. The analysis is carried out by applying Lorentz transformations to previous results for nongyrotropic equilibrium distributions. The dispersion matrix, its eigenmodes (which relate field amplitudes), and the dispersion relation are obtained. Numerical results show that varying the spatiotemporal properties of a nongyrotropic equilibrium distribution has only a small effect on maximum growth rates of radiation, but has a strong effect on the frequencies and wavenumbers at which instability occurs. A novel mechanism is found by which electrons emit stimulated radiation at frequencies that, in principle, can be greater than the usual Doppler-shifted electron cyclotron frequency by orders of magnitude. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 6
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Physics of Plasmas 5 (1998), S. 3416-3439 
    ISSN: 1089-7674
    Source: AIP Digital Archive
    Topics: Physics
    Notes: An investigation is made of the effects of nongyrotropic equilibrium distributions in the phase angle of p⊥ on the stability properties of a relativistic electron beam propagating along and gyrating about an applied uniform magnetic field. Perturbations are assumed to vary spatially only in the direction of the applied magnetic field, so that generated electromagnetic and longitudinal electric fields propagate parallel to the applied field. The two equilibrium distributions considered are the time-dependent distribution f0(p⊥,pz,ξ) with ξ=φ−Ωct/γ and the axial-dependent distribution f0(p⊥,pz,ζ) with ζ=φ−mΩcz/pz. A Vlasov-Maxwell analysis leads to integral equations relating the field Fourier components. These equations reduce to algebraic equations when no spread in γ is present in the time-dependent equilibrium distribution and when no spread in pz is present in the axial-dependent distribution. Numerical computations for these special cases show that a rich variety of stability properties are obtained by changing the distributions in ξ and ζ. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 7
    Electronic Resource
    Electronic Resource
    s.l. : American Chemical Society
    Inorganic chemistry 20 (1981), S. 944-945 
    ISSN: 1520-510X
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology
    Type of Medium: Electronic Resource
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  • 8
    Electronic Resource
    Electronic Resource
    s.l. : American Chemical Society
    Journal of the American Chemical Society 81 (1959), S. 5516-5517 
    ISSN: 1520-5126
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology
    Type of Medium: Electronic Resource
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  • 9
    Electronic Resource
    Electronic Resource
    s.l. : American Chemical Society
    Journal of the American Chemical Society 85 (1963), S. 3419-3425 
    ISSN: 1520-5126
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology
    Type of Medium: Electronic Resource
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  • 10
    Electronic Resource
    Electronic Resource
    s.l. : American Chemical Society
    Journal of the American Chemical Society 79 (1957), S. 5148-5151 
    ISSN: 1520-5126
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology
    Type of Medium: Electronic Resource
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