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  • *Symbiosis  (1)
  • 60  (1)
  • American Association for the Advancement of Science (AAAS)  (1)
  • Springer  (1)
  • Oxford University Press
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  • American Association for the Advancement of Science (AAAS)  (1)
  • Springer  (1)
  • Oxford University Press
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  • 1
    Publication Date: 2003-01-18
    Description: The symbiosis between fungus-growing ants and the fungi they cultivate for food has been shaped by 50 million years of coevolution. Phylogenetic analyses indicate that this long coevolutionary history includes a third symbiont lineage: specialized microfungal parasites of the ants' fungus gardens. At ancient levels, the phylogenies of the three symbionts are perfectly congruent, revealing that the ant-microbe symbiosis is the product of tripartite coevolution between the farming ants, their cultivars, and the garden parasites. At recent phylogenetic levels, coevolution has been punctuated by occasional host-switching by the parasite, thus intensifying continuous coadaptation between symbionts in a tripartite arms race.〈br /〉〈span class="detail_caption"〉Notes: 〈/span〉Currie, Cameron R -- Wong, Bess -- Stuart, Alison E -- Schultz, Ted R -- Rehner, Stephen A -- Mueller, Ulrich G -- Sung, Gi-Ho -- Spatafora, Joseph W -- Straus, Neil A -- New York, N.Y. -- Science. 2003 Jan 17;299(5605):386-8.〈br /〉〈span class="detail_caption"〉Author address: 〈/span〉Department of Ecology and Evolutionary Biology, University of Kansas, Lawrence, KS 66045, USA. ccurrie@ku.edu〈br /〉〈span class="detail_caption"〉Record origin:〈/span〉 〈a href="http://www.ncbi.nlm.nih.gov/pubmed/12532015" target="_blank"〉PubMed〈/a〉
    Keywords: Agaricales/growth & development/*physiology ; Animals ; Ants/microbiology/*physiology ; Ascomycota/physiology ; Bacterial Physiological Phenomena ; *Biological Evolution ; DNA, Fungal/analysis/genetics ; Hypocreales/classification/growth & development/isolation & ; purification/*physiology ; Phylogeny ; Sequence Analysis, DNA ; *Symbiosis
    Print ISSN: 0036-8075
    Electronic ISSN: 1095-9203
    Topics: Biology , Chemistry and Pharmacology , Computer Science , Medicine , Natural Sciences in General , Physics
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  • 2
    Electronic Resource
    Electronic Resource
    Springer
    Applied physics 29 (1982), S. 63-68 
    ISSN: 1432-0630
    Keywords: 72.40 ; 73 ; 85 ; 60
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract The electrical properties ofn +-window layers inp-i-n a-Si:H solar cells were characterised as a function ofn +-layer thickness, $$d_{n^ + } $$ , by measuring firstly the activation energyE a of the dark conductivity and secondly the built-in potentialV bi of the cells.E a was found to increase with decreasing $$d_{n^ + } $$ attaining values as high as 0.8 eV for $$d_{n^ + } $$ ≅5nm; bulk values, e.g.E a ≅. 2eV in the amorphous andE a〈0.01 eV in the microcrystalline case, were only observed for $$d_{n^ + } $$ 〉20nm and for $$d_{n^ + } $$ 〉200nm, respectively. In contrast,V bi did not depend on $$d_{n^ + } $$ at all and was further found to be consistent with expectations based on the Fermi level positions in bulkn + andp +-material. As a consequenceE a in very thin films can no longer be considered as a measure of (E C −E F), the distance of the Fermi level from the conduction band edge. The apparent inconsistency inherent to theE a and theV bi results can be resolved by assuming that the deposition of then +-material proceeds via the growth and coalescence of small islands.
    Type of Medium: Electronic Resource
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