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  • American Association for the Advancement of Science (AAAS)  (2)
  • American Institute of Physics (AIP)  (1)
  • 1
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    Development of mouse embryos in vitro: preimplantation to the limb bud stage (1982)
    American Association for the Advancement of Science (AAAS)
    Details
    Publication Date: 1982-10-01
    Description: Mouse embryos were grown successfully in vitro from the blastocyst stage to the limb bud stage. Mouse blastocysts grown in vitro for 10 days showed blood circulation in the yilk sac, forelimb buds, and the primordia of liver, pancreas, and lungs. These characteristics are indicative of a developmental stage equivalent to one-half of the total gestation period in utero. Improvements in culture conditions from days 7 to 9 have made it feasible to culture mouse blastocysts beyond the early somite stage.〈br /〉〈span class="detail_caption"〉Notes: 〈/span〉Chen, L T -- Hsu, Y C -- AM 19535/AM/NIADDK NIH HHS/ -- AM 28550/AM/NIADDK NIH HHS/ -- New York, N.Y. -- Science. 1982 Oct 1;218(4567):66-8.〈br /〉〈span class="detail_caption"〉Record origin:〈/span〉 〈a href="http://www.ncbi.nlm.nih.gov/pubmed/7123220" target="_blank"〉PubMed〈/a〉
    Keywords: Animals ; Blastocyst/*physiology ; Cell Differentiation ; Culture Media ; Culture Techniques ; Embryo, Mammalian/*physiology ; Female ; Fetal Blood ; Humans ; Mice ; Pregnancy ; Yolk Sac/physiology
    Print ISSN: 0036-8075
    Electronic ISSN: 1095-9203
    Topics: Biology , Chemistry and Pharmacology , Computer Science , Medicine , Natural Sciences in General , Physics
    Published by American Association for the Advancement of Science (AAAS)
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  • 2
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    Monozygotic twin formation in mouse embryos in vitro (1980)
    American Association for the Advancement of Science (AAAS)
    Details
    Publication Date: 1980-08-01
    Description: Monozygotic twins developed from cultured murine blastocysts at the ratio of approximately 1:100. The locus at which the denuded blastocysts attached to the culture dish was usually a random section of their mural trophoblasts, in which case single egg cylinders developed unilaterally. However, in those few blastocysts attaching with their antipolar mural trophoblasts, the inner cell mass became subdivided into two parts because of restrictions imposed on its growth by the apically situated polar trophoblasts and the plastic substrate. Each subdivision apparently incorporated totipotent cells, resulting in the bilateral formation of two egg cylinders sharing the same ectoplacental cone.〈br /〉〈span class="detail_caption"〉Notes: 〈/span〉Hsu, Y C -- Gonda, M A -- New York, N.Y. -- Science. 1980 Aug 1;209(4456):605-6.〈br /〉〈span class="detail_caption"〉Record origin:〈/span〉 〈a href="http://www.ncbi.nlm.nih.gov/pubmed/7190325" target="_blank"〉PubMed〈/a〉
    Keywords: Animals ; Blastocyst/physiology ; Culture Media ; Embryo, Mammalian/*physiology ; Female ; Fertilization in Vitro ; Mice ; Pregnancy ; *Twins ; *Twins, Monozygotic
    Print ISSN: 0036-8075
    Electronic ISSN: 1095-9203
    Topics: Biology , Chemistry and Pharmacology , Computer Science , Medicine , Natural Sciences in General , Physics
    Published by American Association for the Advancement of Science (AAAS)
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  • 3
    Electronic Resource
    Electronic Resource
    Photoenhanced wet oxidation of gallium nitride (2000)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 76 (2000), S. 511-513 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We investigate the photo-oxidation process and the corresponding passivation effects on the optical properties of unintentionally doped n-type gallium nitride (GaN). When illuminated with a 253.7 nm mercury line source, oxidation of GaN is found to take place in aqueous phosphorus acid solutions with pH values ranging from 3 to 4. At room temperature, the photo-oxidation process is found reaction-rate limited and has a peak value of 224 nm/h at pH=3.5. Compared with the as-grown GaN layers, threefold enhancement in the photocurrent and photoluminescence response are observed on the oxidized GaN surfaces. These results are attributed to the surface passivation effects due to the deep ultraviolet-enhanced wet oxidation on GaN. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.125804
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