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  • Ion implantation  (2)
  • 61.1.P  (1)
  • Springer  (3)
  • American Association for the Advancement of Science
  • American Chemical Society
  • American Institute of Physics (AIP)
  • Springer Nature
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Keywords
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  • Springer  (3)
  • American Association for the Advancement of Science
  • American Chemical Society
  • American Institute of Physics (AIP)
  • Springer Nature
Years
  • 1
    Electronic Resource
    Electronic Resource
    Boron implantations in silicon: A comparison of charge carrier and boron concentration profiles (1974)
    Springer
    Applied physics 4 (1974), S. 125-133 
    Details
    ISSN: 1432-0630
    Keywords: Ion implantation ; Hall effect measurements ; Secondary ion mass spectrometry
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract The concentration profiles of boron implanted in silicon were measured using secondary ion mass spectrometry. The accompanying charge carrier profiles were determined by Hall-effect sheet-resistivity measurements combined with layer removal by anodic oxidation and etching. From a mutual comparison of these profiles an electrically inactive boron fraction was found to exist in the region of maximum boron concentration. This fraction can be correlated with boron precipitates. In high dose implantations the precipitates still exist after annealing at 1000°C. In the tail of the profile a small electrically inactive boron fraction was observed. This fraction was correlated with fast diffusing non-substitutional boron. Near the surface a charge carrier peak was found that can be correlated with the damage caused by implantation. The interpretation of the observed electrical effects was facilitated by investigations on boron concentration profiles of layers implanted with different doses and annealed in accordance with different time-temperature schedules.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00884267
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  • 2
    Electronic Resource
    Electronic Resource
    Influence of annealing on the concentration profiles of boron implantations in silicon (1973)
    Springer
    Applied physics 2 (1973), S. 265-278 
    Details
    ISSN: 1432-0630
    Keywords: Ion implantation ; Annealing behaviour ; Secondary ion mass spectrometry
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract The influence of annealing on the concentration profiles of boron implanted into silicon with does of 1014 ions/cm2 up to 1016 ions/cm2 and an energy of 70 keV was studied. The concentration profiles were measured with Secondary Ion Mass Spectrometry (SIMS). The broadening of the concentration profiles during annealing can be described as a superposition of effects resulting from a relatively immobile and a mobile boron fraction. The properties of the immobile boron fraction were studied by measuring the influence of a boron implantation on the distribution of a homogeneous boron background dope. From these experiments it was concluded that the immobile boron fraction consists of boron precipitates. The properties of the mobile fraction were studied from concentration profiles that were obtained after annealing during different periods at the same temperature. It was found that during the initial stage of the annealing process a fast broadening of the profile occurs; this was assumed to be due to an interstitial type boron diffusion. After prolonged annealing the much slower substitutional type diffusion prevails, due to trapping of the interstitial boron atoms by vacancies. The reliability of the SIMS method, as applied to profile measurements, was checked for the high boron doses used in this investigation. Excessive boron precipitates, obtained after annealing of a high dose, such as 1016 ions/cm2 at about 1000°C, appear to give some increase of the ion yield.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00889509
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  • 3
    Electronic Resource
    Electronic Resource
    Determination of C60/C70 ratios in fullerene mixtures and film characterization by scanning tunneling microscopy (1993)
    Springer
    Applied physics 56 (1993), S. 197-205 
    Details
    ISSN: 1432-0630
    Keywords: 36.40 ; 61.1.P ; 68.20
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Fullerene powder mixtures with different C60/C70 ratios have been analyzed by a variety of techniques, and results have been compared. The fullerence mixtures have been characterized as solutions in n-hexane by high-pressure liquid chromatography (HPLC) and UV-VIS spectroscopy. Thin films of fullerenes on Au(111) have been prepared from the mixtures by sublimation. The sublimation process has been studied by simultaneous thermogravimetric and differential thermal analyses. Thin fullerene films on Au(111) have been investigated by scanning tunneling microscopy (STM). The STM images show primarily two types of ballshaped molecules arranged in a lattice with hexagonal symmetry (fcc(111) face, nearest neighbour distance: 1 nm). The two species differ in diameter. STM images of films made of mixtures of different C60/C70 ratios show that C70 molecules display a larger apparent diameter (0.8 nm) and corrugation than C60 molecules (0.7 nm). The C60/C70 ratios obtained by counting the corresponding molecular species in the STM images of the thin films are compared to the C60/C70 ratios determined by HPLC on hexane solutions of the mixtures. The observed differences might be explained by different rates of sublimation for the two species. The STM images reveal film defects (vacancies and boundaries) and dynamic processes (displacement of C70 molecules and vacancies). In films prepared to have a C60 coverage of less than one monolayer, stable structural units of the C60(111) surface consisting of three or seven C60 molecules are revealed by STM. Occasionally, substructure within individual fullerene molecules is observed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00539474
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