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  • ELECTRONICS AND ELECTRICAL ENGINEERING  (3)
  • Engineering General  (3)
Collection
Keywords
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  • 1
    Electronic Resource
    Electronic Resource
    A numerical model for wave scattering problems in infinite media due to p- and sv-wave incidences (1992)
    Chichester [u.a.] : Wiley-Blackwell
    International Journal for Numerical Methods in Engineering 33 (1992), S. 1661-1682 
    Details
    ISSN: 0029-5981
    Keywords: Engineering ; Engineering General
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Mathematics , Technology
    Notes: Based on elastic wave motion theory and the superposition concept, a numerical model for wave scattering problems in infinite media due to P-wave and SV-wave incidences is presented in this paper. Since this model is based on a coupled system of finite and infinite elements for simulating wave propagation in infinite media, the complexity of geometry and the variability of material properties in the foundation can be realistically simulated. Through a systematic study of the characteristics of a plane harmonic P-wave and SV-wave incidences on a fixed boundary, the concept of stress increase factors and stress factors which can be used to calculate the generalized stresses on the wave input boundary due to the SV-wave and P-wave incidences is also proposed. The effects of incident wave mode, incident angle and Poisson's ratio in the foundation on the stress increase factors and the stress factors have been studied in detail. Finally, the proposed model has been applied to a half-plane foundation and a semi-circular canyon to calculate SV-wave and P-wave scattering problems. The numerical results obtained show good agreement with the theoretical results and Wong's analytical results.
    Additional Material: 18 Ill.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1002/nme.1620330808
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    Paper (German National Licenses)
    Fulltext
  • 2
    Electronic Resource
    Electronic Resource
    Vertical stress distribution due to an arbitrarily shaped foundation using triangulation and an analytical expression for a triangular loaded region (1991)
    New York, NY [u.a.] : Wiley-Blackwell
    International Journal for Numerical and Analytical Methods in Geomechanics 15 (1991), S. 51-60 
    Details
    ISSN: 0363-9061
    Keywords: Engineering ; Engineering General
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Architecture, Civil Engineering, Surveying , Geosciences
    Notes: Using the basic Boussinesq's equation, the expression for the vertical stress distribution (σz) underneath any point on the ground surface due to a general triangular loaded region in a preferred orientation with a linearly varied loading has been successfully derived. When the triangle is not in a preferred orientation, a simple axis transformation is required and the expression will be equally applicable. Based on this expression, σz due to an arbitrarily shaped loaded foundation can simply be determined by first triangulating the loaded area and summing up the contributions from each generated triangular region. The procedures for triangulating and calculating the stress distribution can be simply automated through computer programs.
    Additional Material: 5 Ill.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1002/nag.1610150105
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    Paper (German National Licenses)
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  • 3
    Electronic Resource
    Electronic Resource
    Discussion on: Vertical stress distribution due to an arbitrarily shaped foundation using triangulation and an analytical expression for a triangular loaded region (1992)
    New York, NY [u.a.] : Wiley-Blackwell
    International Journal for Numerical and Analytical Methods in Geomechanics 16 (1992), S. 377-381 
    Details
    ISSN: 0363-9061
    Keywords: Engineering ; Engineering General
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Architecture, Civil Engineering, Surveying , Geosciences
    Additional Material: 1 Ill.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1002/nag.1610160506
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    Paper (German National Licenses)
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  • 4
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    Distributed effect in GaAs MESFET (1979)
    In:  Other Sources
    Details
    Publication Date: 2019-06-27
    Description: In order to obtain higher output power, the width of a single cell MESFET must be large. When it becomes too large the distributed effect along the width direction tends to limit the output power. It is found that the distributed effect is important when the gate width not less than 150 microns and that the gain decreases with gate width. Also found is that spurious oscillations occur due to line resonances at much higher frequencies than can be accounted for by the instability factor in the discrete device model.
    Keywords: ELECTRONICS AND ELECTRICAL ENGINEERING
    Type: Solid-State Electronics; 22; Dec. 197
    Format: text
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  • 5
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    An investigation of thermal resistance in single- and multiple-cell GaAs MESFETs (1979)
    In:  Other Sources
    Details
    Publication Date: 2019-06-27
    Description: Thermal resistances among FETs of a variable number of gates in parallel are compared. Although the thermal resistance per cell for multiple cells is higher, the total thermal resistance is still low because all the cells are parallel to one another. This implies that the multiple-cell structure is capable of dissipating more power than the single-cell structure and therefore of being used as a power FET.
    Keywords: ELECTRONICS AND ELECTRICAL ENGINEERING
    Type: International Journal of Electronics; 47; Aug. 197
    Format: text
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  • 6
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    Velocity overshoot effect on a short-gate microwave MESFET (1979)
    In:  Other Sources
    Details
    Publication Date: 2019-06-27
    Description: The device parameters of short-gate GaAs and InP FETs have been found to be dependent on the nonequilibrium velocity overshoot phenomenon. Both saturation velocity and critical field are found to be larger for shorter gates. The v-E characteristics of Pucel et al. (1975) are modified. The cutoff frequency and other parameters for GaAs, InP, and Si are given as a function of gate length and bias. The cutoff frequency of InP MESFETs with a doping density of 10 to the 17th per cu cm is only 20% higher than those of equivalent GaAs MESFETs at 300 K. Comparison with other work is also presented.
    Keywords: ELECTRONICS AND ELECTRICAL ENGINEERING
    Type: International Journal of Electronics; 47; July 197
    Format: text
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