Publication Date:
2019-07-13
Description:
Bipolar n-p-n transistors fabrication to increase driving capabilities of complementary MOS transistors while retaining low power dissipation
Keywords:
ELECTRONIC EQUIPMENT
Type:
INST. OF ELECTRICAL AND ELECTRONICS ENGINEERS, ELECTRON DEVICES MEETING; Oct 23, 1968 - Oct 25, 1968; WASHINGTON, DC|; RNIER-POST (
Format:
text
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