ISSN:
1573-4803
Source:
Springer Online Journal Archives 1860-2000
Topics:
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
Notes:
Abstract Epitaxial layers of ZnS were grown on GaP single crystals by a chemical transport reaction. The growth process and the heterostructures obtained were investigated by X-ray diffraction and optical microscopy. It was found that the epitaxial overgrowth is polarity dependent. The formation of a transition layer at the interface between the ZnS and GaP was observed.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1007/BF00742426
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