Digitale Medien
Copenhagen
:
International Union of Crystallography (IUCr)
Applied crystallography online
3 (1970), S. 172-174
ISSN:
1600-5767
Quelle:
Crystallography Journals Online : IUCR Backfile Archive 1948-2001
Thema:
Geologie und Paläontologie
,
Physik
Notizen:
The structure and topography have been examined of β-SiC layers formed on silicon heated in a low pressure of ethylene in an ultra-high vacuum system. Particulate epitaxic growth has been observed on substrates of various low-index orientations and an unusual double epitaxic relationship on (110) substrates noted.
Materialart:
Digitale Medien
URL:
http://dx.doi.org/10.1107/S0021889870005873
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