ISSN:
1432-2234
Keywords:
Silicon band structure
;
Silanes
;
Vertical ionization potentials
Source:
Springer Online Journal Archives 1860-2000
Topics:
Chemistry and Pharmacology
Notes:
Abstract The problem of the prediction of the valence IPs for silanes is considered. It is shown that the data on the silicon band structure combined with the photoelectron spectra of SiH4, and Si2H6 permit to obtain the parameter scale, which includes all the nearest neighbour, second neighbour and the main third neighbour interaction parameters. Using the derived parameter scale the vertical ionization potentials of Si3H8, SiH(SiH3)3, Si(SiH3)4, the infinite polysilane valence band structure and the inner a 1g level for disilane are calculated. All the calculated levels are located above − 20 eV and are expected to be measurable by the He (I) photoelectron spectroscopy.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1007/BF00548458
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