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  • 1
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    The recombination velocity at III-V compound heterojunctions with applications to Al (x) Ga(1-x)As-GaAs(1-y)Sb(y) (1978)
    In:  CASI
    Details
    Publication Date: 2019-06-27
    Description: Interface recombination velocity in AlxGa1-xAs-GaAs and A10.85 Ga0.15As-GaAs1-ySby heterojunction systems was studied as a function of lattice mismatch. The results are applied to the design of highly efficient III-V heterojunction solar cells. A horizontal liquid-phase epitaxial growth system was used to prepare p-p-p and p-p-n double heterojunction test samples with specified values of x and y. Samples were grown at each composition, with different GaAs and GaAsSb layer thicknesses. A method was developed to obtain the lattice mismatch and lattice constants in mixed single crystals grown on (100) and (111)B oriented GaAs substrates.
    Keywords: ENERGY PRODUCTION AND CONVERSION
    Type: NASA-CR-157181 , SU-SEL-78-014 , TR-5127-1
    Format: application/pdf
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    NASA TECHNICAL REPORTS
  • 2
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    Modeling of fluidized bed silicon deposition process (1977)
    In:  CASI
    Details
    Publication Date: 2019-06-27
    Description: The model is intended for use as a means of improving fluidized bed reactor design and for the formulation of the research program in support of the contracts of Silicon Material Task for the development of the fluidized bed silicon deposition process. A computer program derived from the simple modeling is also described. Results of some sample calculations using the computer program are shown.
    Keywords: ENERGY PRODUCTION AND CONVERSION
    Type: NASA-CR-154120 , JPL-PUBL-77-25
    Format: application/pdf
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    NASA TECHNICAL REPORTS
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