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  • ELECTRONICS AND ELECTRICAL ENGINEERING  (1)
  • 1975-1979  (1)
  • 1
    Publication Date: 2019-07-13
    Description: Data for the beam-leaded silicon-on-sapphire (SOS) process using the TA5388 dual-complementary pair plus inverted circuit show the stability of the dc device characteristics through the complete beam-lead processing and packaging steps. A more complex circuit, the TA6567 - a silicon-gate, voltage-sense BL/CMOS/SOS 256-bit RAM, has also been made that was functionally perfect at wafer probe. Efforts to increase the yield of this circuit and to obtain electrically perfect packaged units are discussed.
    Keywords: ELECTRONICS AND ELECTRICAL ENGINEERING
    Type: NASA-CR-120735 , PRRL-75-CR-20 , QTR-16
    Format: application/pdf
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