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  • 1
    Electronic Resource
    Electronic Resource
    Factors affecting ethylene production by some plant pathogenic bacteria (1979)
    Springer
    Plant and soil 51 (1979), S. 19-26 
    Details
    ISSN: 1573-5036
    Keywords: Bacteria ; Cofactors ; Copper ; Ethylene ; FMN ; Light ; Methionine ; Plant pathogens ; Pseudomonas ; Substrate ; Temperature
    Source: Springer Online Journal Archives 1860-2000
    Topics: Agriculture, Forestry, Horticulture, Fishery, Domestic Science, Nutrition
    Notes: Summary Methionine, up to 10−3 M, added to a basal medium enhanced bacterial ethylene production in 14 of the 20 bacteria tested. The effects of substrate, cofactors, light, and temperature on ethylene production byPseudomonas solanacearum #25 revealed that the greatest effect occurred when 10−5 M methionine and 10−4 M FMN were combined, from which 4.10μl/l of ethylene were produced. Higher levels of methionine resulted in production of high levels of non-enzymically produced ethylene and death of the bacteria. This non-enzymic production of ethylene was eliminated in the dark. Copper had no effect upon ethylene production. Twenty-nine and 35°C were inhibitory, whereas 19°C appeared to be near optimum for ethylene production.Pseudomonas solanacaerum #25 and some other bacteria are capable of ethylene production and methionine and FMN enhance this production.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF02205923
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    Paper (German National Licenses)
    Fulltext
  • 2
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    Thermally grown oxide and diffusions for automatic processing of integrated circuits (1979)
    In:  CASI
    Details
    Publication Date: 2019-06-28
    Description: A totally automated facility for semiconductor oxidation and diffusion was developed using a state-of-the-art diffusion furnace and high temperature grown oxides. Major innovations include: (1) a process controller specifically for semiconductor processing; (2) an automatic loading system to accept wafers from an air track, insert them into a quartz carrier and then place the carrier on a paddle for insertion into the furnace; (3) automatic unloading of the wafers back onto the air track, and (4) boron diffusion using diborane with plus or minus 5 percent uniformity. Processes demonstrated include Wet and dry oxidation for general use and for gate oxide, boron diffusion, phosphorous diffusion, and sintering.
    Keywords: ELECTRONICS AND ELECTRICAL ENGINEERING
    Type: NASA-TM-78247
    Format: application/pdf
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    NASA TECHNICAL REPORTS
  • 3
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    Supersonic and subsonic measurements of mesospheric ionization. (1972)
    In:  Other Sources
    Details
    Publication Date: 2019-06-27
    Description: An Arcas rocket-parachute system was used at night to compare supersonic and subsonic ionization measurements below 75 km. A hemispherical nose-tip probe was used on ascent and a parachute-borne blunt probe on descent to measure polar conductivities, which were due entirely to positive and negative ions. The velocity of the supersonic probe was Mach 2.5 at 50 km and 1.75 at 70 km; the blunt probe was subsonic below 71 km. Between 65 and 75 km the ratio of negative to positive conductivities (and thus of mobilities) determined by the blunt probe was about 1.2, and it approached 1 below this altitude range. The ratio obtained by the nose-tip probe varied from 1.5 at 75 km to .6 at 65 km, thus indicating a rapid variation of the effects of the shock wave on the sampled ions. The absolute values of positive conductivity measured subsonically and supersonically were essentially identical from 60 to 75 km, indicating that the sampled ions were unchanged by the shock. However, below 60 km the shock apparently 'broke up' the positive ions, as indicated by higher measured conductivities.
    Keywords: GEOPHYSICS
    Format: text
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    NASA TECHNICAL REPORTS
  • 4
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    Chemical etching for automatic processing of integrated circuits (1981)
    In:  CASI
    Details
    Publication Date: 2019-06-28
    Description: Chemical etching for automatic processing of integrated circuits is discussed. The wafer carrier and loading from a receiving air track into automatic furnaces and unloading onto a sending air track are included.
    Keywords: ELECTRONICS AND ELECTRICAL ENGINEERING
    Type: NASA-TM-82411 , NAS 1.15:82411
    Format: application/pdf
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    NASA TECHNICAL REPORTS
  • 5
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    Chemical vapor deposition for automatic processing of integrated circuits (1980)
    In:  CASI
    Details
    Publication Date: 2019-06-28
    Description: Chemical vapor deposition for automatic processing of integrated circuits including the wafer carrier and loading from a receiving air track into automatic furnaces and unloading on to a sending air track is discussed. Passivation using electron beam deposited quartz is also considered.
    Keywords: ELECTRONICS AND ELECTRICAL ENGINEERING
    Type: NASA-TM-78274 , NAS 1.15:78274
    Format: application/pdf
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    NASA TECHNICAL REPORTS
  • 6
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    Intercalibration of airglow observatories with the Atmosphere Explorer satellite (1977)
    In:  Other Sources
    Details
    Publication Date: 2019-06-27
    Description: The visible airglow photometer on the Atmosphere Explorer C satellite has been used to compare the calibrations of a number of ground-based airglow observatories. Discrepancies between different ground stations as large as a factor of six have been revealed. Efforts to account for these discrepancies have resulted in the discovery of differences as large as a factor of two in the standard light sources in use at different observatories. The participation of additional observatories in the intercomparison of standard sources is solicited. The project has also led to the discovery of a source of error that can amount to another factor of two in the procedure used to calibrate many airglow instruments. In the course of the project, detailed maps based on satellite data have been made of the galactic and zodiacal-light background at a number of wavelengths, and a substantial source of contaminating emission has been discovered in the satellite data. The contamination appears to result from interaction of the spacecraft and the atmosphere at altitudes below 170 km.
    Keywords: GEOPHYSICS
    Type: Planetary and Space Science; 25; Feb. 197
    Format: text
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    NASA TECHNICAL REPORTS
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