Publication Date:
2019-07-13
Description:
The behavior of 144 high-performance shallow-junction silicon solar cells under conditions of low temperature and intensity was examined. The cells represented nine combinations of thickness, base resistivity, front surface texture, and rear surface treatment. At least 16 cells of each type were individually tested both as active elements under light levels between 0.04 and 1.0 solar constant and in the dark as passive rectifiers under external forward bias. One cell type was also irradiated with 1 MeV electrons up to 2.7 x 10 to the 15th e/sq cm. The inferior cells demonstrated high ohmic and/or non-ohmic shunting. No series resistance or Schottky barrier effects were observed. Fluences beyond 10 to the 13th e/sq cm lowered cell current, probably by increasing volume recombination.
Keywords:
ENERGY PRODUCTION AND CONVERSION
Type:
AIAA PAPER 81-0695
,
International Electric Propulsion Conference; Apr 21, 1981 - Apr 23, 1981; Las Vegas, NV; US
Format:
text
Permalink
