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  • ENGINEERING (GENERAL)  (2)
  • 1980-1984  (2)
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  • 1
    facet.materialart.
    Unknown
    Pressure concentrations due to plastic deformation of thin films or gaskets between anvils (1982)
    In:  Other Sources
    Details
    Publication Date: 2011-08-18
    Description: Plastic deformation of either a sample or a gasket between diamond anvils leads to large pressure concentrations, i.e., the maximum pressure can be many times the average pressure. This behavior is discussed using elementary plasticity theory for the case where the pressures are sufficiently low that the yield stress can be assumed not to vary with pressure. It is then shown that the pressure concentration factor can be even much larger when the yield stress of the sample at the highest pressure is much greater than the yield stress at the lowest pressure. This is illustrated with solid xenon where it is shown that the assumption that Nelson and Ruoff made about the pressure distribution in their xenon samples is incorrect. The pressure distribution is shown to be much steeper than assumed. Thus, the pressure they observed electrical conduction in xenon was above 1 Mbar.
    Keywords: ENGINEERING (GENERAL)
    Type: Journal of Applied Physics; 53; Oct. 198
    Format: text
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  • 2
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    Unknown
    Etching of diamond with argon and oxygen ion beams (1984)
    In:  Other Sources
    Details
    Publication Date: 2011-08-18
    Description: The angular dependences of the sputter yield of (100) single crystal diamond under argon and oxygen ion beams were investigated. For argon ion beams a large increase in the sputter yield was observed as the angle of incidence was increased from the normal, with a maximum occurring at approximately 60 deg from the normal. The magnitude of the increase and the angle at which the maximum was observed were dependent on the ion energy and species. The shape of the yield versus angle of incidence curve indicated the presence of a highly damaged surface layer. Large deviations from this curve were observed where ion incidence was along channeling directions. Studies with oxygen ion beams showed almost no angular dependence for 500 eV ions while at an energy of 1000 eV the angular dependence was similar to that for argon ions. At normal incidence the yield for 500 eV oxygen ions was seven times larger than that for 500 eV argon ions. For 1000 eV oxygen and argon ions the corresponding ratio is only 2.5. Implications for mechanisms of inert and reactive ion etching are discussed. Application of the data to ion beam shaping of diamond tips for ultrahigh pressure research is discussed.
    Keywords: ENGINEERING (GENERAL)
    Type: Journal of Vacuum Science and Technology A (ISSN 0734-2101); 2; 477-480
    Format: text
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