ISSN:
1432-0630
Keywords:
81.15.-z
;
78.55.-m
;
78.20.-e
Source:
Springer Online Journal Archives 1860-2000
Topics:
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
,
Physics
Notes:
Abstract Nominally undoped AlxGa1−xAs grown by molecular beam epitaxy from As4 species at elevated substrate temperatures of 670°C exhibits well-resolved excitonic fine structure in the low-temperature photoluminescence spectra, if the effective As-to-(Al+Ga) flux ratio on the growth surface is kept within a rather narrow range of clearly As-stabilized conditions. In contrast to previous results on AlxGa1−xAs of composition 0.15〈x〈0.25, the prominent carbon-related recombination at ∼23 meV below the bound exciton line was foundnot to shift in energy by changing the excitation intensity. This implies a simple freeelectron carbon-acceptor recombination mechanism for the line without any participation of a donor. In AlxGa1−xAs of composition close to the direct-to-indirect cross-over point, two distinct LO-phonons separated by 34 and 48 meV from the (D 0,C 0) peak position at x=0.43 were observed which were before only detectable by Raman scattering experiments. The intensity of the carbon-impurity related luminescence lines in bulk-type AlxGa1−xAs and GaAs layers was found to be strongly reduced, as compared to the excitonic recombination lines, if the respective active layer was covered by a very thin confinement layer of either GaAs on top of AlxGa1−xAs or vice versa grown in the same growth cycle.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1007/BF01197079
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