ISSN:
0032-3888
Keywords:
Chemistry
;
Chemical Engineering
Source:
Wiley InterScience Backfile Collection 1832-2000
Topics:
Chemistry and Pharmacology
,
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
,
Physics
Notes:
Photolithographic and electron-beam integrated circuit fabrication techniques rely heavily upon differences in polymer resist dissolution (development) rates to produce circuit patterns. We have applied the wide-line NMR, technique, augmented by dynamic nuclear polarization, to the measurement of polymer dissolution rates of poly(methyl methacrylate), (PMMA). At high gamma-ray exposures, we find PMMA to have dissolution rates from 2X to 1000X those of unirradiated material. The highest radiation-enhanced dissolution rates are obtained with carbon tetrachloride-based developer solutions, whereas generally lower enhanced rates are observed with 1:3 acetone or methylethylketone/isopropanol standard developer. E-beam line exposures are developed in PMMA and poly(ethyl methacrylate), PEMA, resists using similar developers for comparison. Using straight CCl4 as a developer, e-beam lines 1-2 μ wide were developed in 3800 Å thick PEMA resist at 1 × 10-5 C/cm2 with ≤200 Å loss in unexposed resist thickness. The higher differential dissolution with CCl4, a poorer solvent for unirradiated PMMA than acetone or MEK, is explained by decline in polarity of PMMA by radiationinduced decarboxylation.
Additional Material:
5 Ill.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1002/pen.760170617
Permalink
