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  • ELECTRONICS AND ELECTRICAL ENGINEERING  (2)
  • Amino acid  (1)
  • 1980-1984  (3)
  • 1975-1979
  • 1
    Electronic Resource
    Electronic Resource
    Amino acids in anthers of Milo and in cytoplasmic genetic male sterile sorghums (Sorghum bicolor L. Moench) of Indian origin (1981)
    Springer
    Theoretical and applied genetics 59 (1981), S. 113-116 
    Details
    ISSN: 1432-2242
    Keywords: Amino acid ; Male sterility ; Cytoplasmic male sterile ; Sorghum bicolor L. Moench ; Maintainer ; Apomict
    Source: Springer Online Journal Archives 1860-2000
    Topics: Biology
    Notes: Summary Amino acid composition of proteins from anthers of milo and Indian origin male steriles were determined. Comparison of amino acid between A and B lines showed lower contents of histidine, threonine, glutamic acid, glycine, leucine and phenylalanine and higher contents of alanine, serine, proline and tyrosine in line A compared to line B. Alanine content in anthers of A lines was more than two fold higher than that in the anthers from B lines. Marked differences in amino acid composition of anthers of A and B lines are suggestive of their involvement in male sterility. Cytoplasmic male steriles of Indian origin M35-1A and M31-2A showed greater similarity but differed from milo, VZM2A and B.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00285900
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    Paper (German National Licenses)
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  • 2
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    The effects of lithium counterdoping on radiation damage and annealing in n(+)p silicon solar cells (1984)
    In:  CASI
    Details
    Publication Date: 2019-07-13
    Description: Boron-doped silicon n(+)p solar cells were counterdoped with lithium by ion implantation and the resultant n(+)p cells irradiated by 1 MeV electrons. Performance parameters were determined as a function of fluence and a deep level transient spectroscopy (DLTS) study was conducted. The lithium counterdoped cells exhibited significantly increased radiation resistance when compared to boron doped control cells. Isochronal annealing studies of cell performance indicate that significant annealing occurs at 100 C. Isochronal annealing of the deep level defects showed a correlation between a single defect at E sub v + 0.43 eV and the annealing behavior of short circuit current in the counterdoped cells. The annealing behavior was controlled by dissociation and recombination of this defect. The DLTS studies showed that counterdoping with lithium eliminated three deep level defects and resulted in three new defects. The increased radiation resistance of the counterdoped cells is due to the interaction of lithium with oxygen, single vacancies and divacancies. The lithium-oxygen interaction is the most effective in contributing to the increased radiation resistance.
    Keywords: ELECTRONICS AND ELECTRICAL ENGINEERING
    Type: NASA-TM-83755 , E-2243 , NAS 1.15:83755 , European Symp. on Photovoltaic Generators in Space; Sep 18, 1984 - Sep 20, 1984; Cannes; France
    Format: application/pdf
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    NASA TECHNICAL REPORTS
  • 3
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    Radiation damage and defect behavior in ion-implanted, lithium counterdoped silicon solar cells (1984)
    In:  CASI
    Details
    Publication Date: 2019-07-13
    Description: Boron doped silicon n+p solar cells were counterdoped with lithium by ion implanation and the resultant n+p cells irradiated by 1 MeV electrons. The function of fluence and a Deep Level Transient Spectroscopy (DLTS) was studied to correlate defect behavior with cell performance. It was found that the lithium counterdoped cells exhibited significantly increased radiation resistance when compared to boron doped control cells. It is concluded that the annealing behavior is controlled by dissociation and recombination of defects. The DLTS studies show that counterdoping with lithium eliminates at least three deep level defects and results in three new defects. It is speculated that the increased radiation resistance of the counterdoped cells is due primarily to the interaction of lithium with oxygen, single vacancies and divacancies and that the lithium-oxygen interaction is the most effective in contributing to the increased radiation resistance.
    Keywords: ELECTRONICS AND ELECTRICAL ENGINEERING
    Type: NASA-TM-83646 , E-2091 , NAS 1.15:83646 , Photovoltaic Spec. Conf.; May 01, 1984 - May 04, 1984; Kissimmee, FL; United States
    Format: application/pdf
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    NASA TECHNICAL REPORTS
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