ISSN:
1432-0630
Keywords:
72.15
;
77.20
Source:
Springer Online Journal Archives 1860-2000
Topics:
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
,
Physics
Notes:
Abstract The dielectric properties of epitaxial Pb1−x Sn x Te layers are investigated at 9 GHz in a composition range betweenx=0 and 0.225. The samples are characterized by fairly low carrier concentrations between 1.4×1016 and 32×1016 cm−3. Data of the static dielectric constant (ε s ) are obtained at temperatures of 77 and 300 K. The results of ε s are 25% to 100% higher compared to previous measurements in bulk material from other authors. The observed higher values of ε s in the investigated samples may be due to the reduced number of point defects in epitaxially grown Pb1−x Sn x Te layers. The model of Kawamura which predicts a dependence of ε s on the effective band gap cannot be verified.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1007/BF00902985
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