Electronic Resource
Copenhagen
:
International Union of Crystallography (IUCr)
Applied crystallography online
9 (1976), S. 178-180
ISSN:
1600-5767
Source:
Crystallography Journals Online : IUCR Backfile Archive 1948-2001
Topics:
Geosciences
,
Physics
Notes:
A double-diffractometric method for X-ray topography revealing the smallest crystal defects in as-grown silicon by a relatively low display is described.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1107/S0021889876010820
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