Electronic Resource
[S.l.]
:
American Institute of Physics (AIP)
Journal of Applied Physics
62 (1987), S. 4629-4631
ISSN:
1089-7550
Source:
AIP Digital Archive
Topics:
Physics
Notes:
The voltage-withstanding behavior of a BaTiO3 ceramic semiconductor is closely related to the grain boundary structure of this kind of ceramic. This mainly depends on the height of the potential barrier in the grain boundary. A novel concept of the barrier height per unit width is proposed, by which the voltage-withstanding mechanism can be satisfactorily explained. Positive temperature coefficient devices of high performance have been developed, which possess resistivity (〈102Ω cm) at room temperature and high withstanding voltage (〉300 V/mm).
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.339008
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