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  • 1
    Electronic Resource
    Electronic Resource
    s.l. : American Chemical Society
    The @journal of physical chemistry 〈Washington, DC〉 90 (1986), S. 2446-2450 
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology , Physics
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    s.l. : American Chemical Society
    The @journal of physical chemistry 〈Washington, DC〉 93 (1989), S. 4064-4068 
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology , Physics
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 52 (1988), S. 898-900 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report for the first time the epitaxy of CoSi2 on 〈111〉 Si submicron lines together with the overgrowth of Si on top of the resulting grating. Results indicate that strain fields and huge mass transport control the morphology of the resulting structures. Silicon is shown to grow two dimensionally when the grating period is in the submicrometer range. Preliminary results on the electrical performance of those Si/CoSi2 /Si permeable base transistors are presented.
    Type of Medium: Electronic Resource
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  • 4
    Electronic Resource
    Electronic Resource
    s.l. : American Chemical Society
    Industrial and engineering chemistry 25 (1986), S. 174-176 
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology , Process Engineering, Biotechnology, Nutrition Technology
    Type of Medium: Electronic Resource
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  • 5
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 66 (1989), S. 5465-5471 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We propose a quantitative approach to the long-range potential fluctuation model previously developed in disordered 3-D semiconductors. To study how potential modulation modifies the conduction processes in 2-D electron gas, metal-oxide-semiconductor field-effect transistor structures were irradiated through the gate oxide by an electron beam (20-keV microfabricator) scanning lines parallel or perpendicular to the drain-source axis. The samples were irradiated at various doses for different periods. Irradiation led to a modulation of the oxide and interface charge, resulting in potential valleys and barriers. A shift in the threshold voltage was measured, which depended on the irradiation dose and also on the direction of the lines. The change in electrical properties (threshold voltage VT, mobility) is simply interpreted by a model based on the existence of a conduction threshold. Thus both the range and magnitude of potential fluctuations are investigated using structures with controllable disorder.
    Type of Medium: Electronic Resource
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  • 6
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 66 (1989), S. 5472-5477 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We present a quantitative approach to the potential fluctuation model we have previously developed in disordered semiconductors. MOSFET (metal-oxide-semiconductor field-effect transistors) were irradiated along lines parallel (L structures) or perpendicular (T structures) to the drain-source direction, using a 20-keV scanned e-beam. Thus, in the inversion regime, the surface potential ψs was periodically modulated, thereby strongly modifying the conduction processes. Hall measurements were performed as a function of temperature and gate voltage at various irradiation doses and for different periods. Conduction in L structures was influenced by lateral potential barrier scattering, whereas it was barrier controlled in T structures. The experimental results are interpreted by a simple model of energetic distribution of both carrier density n(E) and mobility μ(E), based on the existence of a conduction threshold. When barriers were wide in T structures, Hall measurements showed that part of the carriers did not participate in conductivity in the weak inversion regime, while mixed conduction processes occurred when barriers were narrow. In contrast, all the carriers conducted in the strong inversion regime, and only the mobility was perturbed. Thus the field effect in irradiated MOSFET was used to correlate the Hall carrier density with the conduction threshold energy.
    Type of Medium: Electronic Resource
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  • 7
    Electronic Resource
    Electronic Resource
    Oxford, UK : Blackwell Publishing Ltd
    Annals of the New York Academy of Sciences 443 (1985), S. 0 
    ISSN: 1749-6632
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Natural Sciences in General
    Type of Medium: Electronic Resource
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  • 8
    Electronic Resource
    Electronic Resource
    Springer
    Zeitschrift für angewandte Mathematik und Physik 37 (1986), S. 206-229 
    ISSN: 1420-9039
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mathematics , Physics
    Description / Table of Contents: Zusammenfassung Eine genaue Lösung für die ebene Solidifizierung eines flüssigen Metalls, das in einem unendlichen Halbraum liegt, wird dargestellt. Es wird angenommen, daß das Metall nonlineare thermale Elgenschaften der Stormschen Art aufweist. Das idealisierte Einphasen-Problem wie auch das voile Zweiphasen-Problem werden betrachtet. Für beide Probleme wird eine ungefähre Analyse der zugrundeliegenden gekuppelten transzendentalen Gleichungen gegeben, die Anfangswerte zur Verwendung in einer numerischen Darstellung liefert. Es werden typische Zahlenwerte gegeben, die die Monotonie der Lösung illustrieren.
    Notes: Summary An exact parametric solution for the planar solidification of a liquid metal occupying the infinite half-space is presented. The metal is assumed to exhibit nonlinear thermal characteristics of the Storm type. Both the idealized one phase and the full two phase problems are considered. For both problems an approximate analysis of the underlying coupled transcendental equations is presented which provides initial estimates for use in a numerical scheme. Typical numerical results are given which illustrate the monotonic nature of the solution.
    Type of Medium: Electronic Resource
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  • 9
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    Kingston, Jamaica : Periodicals Archive Online (PAO)
    Social and economic studies. 36:1 (1987:Mar.) 289 
    ISSN: 0037-7651
    Topics: Sociology , Economics
    Notes: Special Number: IMPACT OF BAUXITE-ALUMINA ON RURAL JAMAICA
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  • 10
    Electronic Resource
    Electronic Resource
    Springer
    Oecologia 80 (1989), S. 525-532 
    ISSN: 1432-1939
    Keywords: Reptilia ; Clutch size ; Egg size ; Environmental variation ; Reproduction
    Source: Springer Online Journal Archives 1860-2000
    Topics: Biology
    Notes: Summary Early and late season clutch parameters were examined over a three year period in the Florida scrub lizard, Sceloporus woodi. Precipitation levels were monitored throughout the study. In the early and late season of 1984 and the early season of 1986 precipitation levels approximated long-term mean levels of precipitation. In 1985 a severe winter drought occurred. Clutch size was positively related to body size in all samples in every year. In 1984 and 1986, egg size was not related to clutch size, whereas, in 1985 egg size was negatively related to clutch size. In 1985, females produced large clutches of small eggs early in the season and small clutches of large eggs late in the season. In 1984, no seasonal changes in egg or clutch size occurred. In the late season of 1986, females produced the largest clutches and the smallest eggs of all the samples, but egg and clutch size were not statistically different from the early season egg and clutch size of 1986. Total clutch dry weight, an estimate of total clutch energy, was not different in any of the six sampling periods. These data do not support current adaptationist models that attempt to explain the control of clutch and egg size in lizards. It is argued in this paper that egg and clutch size may vary in response to past environments that affect a female's physical condition, as well as, current resources that may be important for maintenance and reproduction. Egg and clutch size appear to be plastic traits selected to respond to proximal environmental variation, whereas, the investment of total dry matter/clutch has been optimized.
    Type of Medium: Electronic Resource
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