ISSN:
1432-0630
Keywords:
73.40S
Source:
Springer Online Journal Archives 1860-2000
Topics:
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
,
Physics
Notes:
Abstract We developed a method for the determination of the minority carrier diffusion coefficient by means of the capacitance-voltage characteristics of a Schottky barrier. Capacitance-voltage-frequency characteristics were measured at room temperature and liquid nitrogen temperature. We adapted the diffusion capacitance concept ofp-n junction for the metal/semiconductor rectifier contact. We determined the minority carrier diffusion coefficient as 47–61 cm2/s.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1007/BF00616554
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