Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
53 (1988), S. 487-489
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
Si pn junctions fabricated by photoresist masked As+ implantation were observed using current imaging tunneling spectroscopy (CITS) in a scanning tunneling microscope (STM). Using the CITS, a specific bias was chosen to define n-type or p-type areas according to whether or not current flowed. The pn junctions could be easily identified from the current image at this bias and in the STM topographic image. It also proved possible to find processing faults related to implantation. The STM images also identified the structure (corrugations) near the junctions, associated with volume expansion caused by implantation and annealing.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.99876
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