Electronic Resource
Springer
International journal of infrared and millimeter waves
6 (1985), S. 235-248
ISSN:
1572-9559
Keywords:
semiconductors
;
impact ionization
;
plasma instability
Source:
Springer Online Journal Archives 1860-2000
Topics:
Physics
Notes:
Abstract The possibility of the excitation of impact-ionized electron-hole plasma oscillatory instability in GaAs with frequency up to 1012 Hz is shown. The linear and nonlinear stages of the instability are investigated.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1007/BF01010359
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