Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
51 (1987), S. 1019-1021
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
A new resonant tunneling process is discussed theoretically. The process relies on elastic intervalley transfers between different band minima, e.g., between Γ and X minima in a GaAs-AlAs system. Single layer GaAs-AlAs-GaAs heterostructures are analyzed. An effective mass envelope function approach is used, and a delta-function transfer potential at heterointerfaces is employed. A resonance in the transmission coefficient is clearly seen, which gives rise to a negative differential resistance region in the current-voltage characteristic.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.98817
Permalink
|
Location |
Call Number |
Expected |
Availability |