ALBERT

All Library Books, journals and Electronic Records Telegrafenberg

X
feed icon rss

Your email was sent successfully. Check your inbox.

An error occurred while sending the email. Please try again.

Proceed reservation?

Export
Filter
  • 1985-1989  (3)
Collection
Keywords
Years
Year
  • 1
    facet.materialart.
    Unknown
    Growth and characterization of single crystal insulators on silicon (1989)
    In:  Other Sources
    Details
    Publication Date: 2011-08-19
    Description: An overview of the growth and characterization of epitaxial insulators on semiconductors is presented. The potential applications include semiconductor-on-insulator structures, three-dimensional and/or high-density integrated circuits, optoelectronic applications such as integrated waveguides and improved gate insulators. The growth and physical characterization of epitaxial fluorides on semiconductors are discussed. Consideration is also given to the epitaxial overgrowth of epitaxial metal layers with CaF2 as well as to the formation of a novel superlattice of Ca particles in epitaxial CaF2.
    Keywords: SOLID-STATE PHYSICS
    Type: Critical Reviews in Solid State and Materials Sciences (ISSN 1040-8436); 15; 4, 19
    Format: text
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    NASA TECHNICAL REPORTS
  • 2
    facet.materialart.
    Unknown
    Making Submicron CoSi2 Structures On Silicon Substrates (1989)
    In:  Other Sources
    Details
    Publication Date: 2019-07-12
    Description: Experimetnal fabrication process makes submicron-sized structures of single-crystal metallic CoSi2 on silicon substrates. Amorphous Co:Si(1:2) crystallized by electron beam becoming single-crystal CoSi2. Remaining amorphous Co:Si then preferentially etched away. When fully developed, process used to make fine wires or dots exhibiting quantum confinement of charge carriers.
    Keywords: FABRICATION TECHNOLOGY
    Type: NPO-17736 , NASA Tech Briefs (ISSN 0145-319X); 13; 9; P. 105
    Format: text
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    NASA TECHNICAL REPORTS
  • 3
    facet.materialart.
    Unknown
    Molecular-Beam Epitaxy Of CrSi2 on Si(111) (1989)
    In:  Other Sources
    Details
    Publication Date: 2019-07-12
    Description: Crystalline layers grown in commercial apparatus. Experiments show CrSi2 grown on (111) face of single-crystal Si substrate by molecular-beam epitaxy. Epitaxial CrSi2 produced thus far not in desired single-crystal form. Because CrSi2 semiconductor with band gap of 0.3 eV, experimental process potential for monolitic integration of microelectronic devices based on CrSi2 (e.g., infrared detectors) with signal-processing circuitry based on Si.
    Keywords: FABRICATION TECHNOLOGY
    Type: NPO-17438 , NASA Tech Briefs (ISSN 0145-319X); 13; 6; P. 97
    Format: text
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    NASA TECHNICAL REPORTS
Close ⊗
This website uses cookies and the analysis tool Matomo. More information can be found here...