Electronic Resource
[S.l.]
:
American Institute of Physics (AIP)
Journal of Applied Physics
65 (1989), S. 596-599
ISSN:
1089-7550
Source:
AIP Digital Archive
Topics:
Physics
Notes:
A photoluminescence, photocapacitance, and thermal annealing study of Ga-rich GaAs has revealed the complex behavior of acceptor levels at 68–77 and 200 meV above the valence band. The concentration of all levels is enhanced by Ga-rich growth conditions, however, only the 77- and 200-meV levels formed preferably in n-type GaAs are consistent with a double-acceptor model of the gallium antisite defect. In p-type GaAs the 68-meV level associated with a different single-acceptor defect is dominant. It is argued that the inhibited formation of double-acceptor GaAs defects in p-type crystals is caused by the Fermi-energy control of the defect formation.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.343114
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