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  • Other Sources  (2)
  • 1985-1989  (2)
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  • 1
    Publication Date: 2013-08-31
    Description: Information is given in viewgraph form. The advantages of the Si blocked impurity band (BIB) detector invented by M. D. Petroff and M. G. Stabelbroek are noted: smaller detection volume leading to a reduction of cosmic ray interference, extended wavelength response because of dopant wavefunction overlap, and photoconductive gain of unity. It is argued that the stated advantages of Si BIB detectors should be realizable for Ge BIB detectors. Information is given on detector development, subtrate choice and preparation, wafer polising, epitaxy, characterization of epi layers, and preliminary Ge BIB detector test results.
    Keywords: INSTRUMENTATION AND PHOTOGRAPHY
    Type: NASA, Ames Research Center, Proceedings of the Third Infrared Detector Technology Workshop; p 85-115
    Format: application/pdf
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  • 2
    Publication Date: 2013-08-31
    Description: Information is given in viewgraph form. Information is given on the characteristics of stressed Ge:Ga, a spring type stress cavity, mounting hardware, materials parameters affecting dark current, and the behavior of low dark current stressed Ge:Ga. It is concluded that detectors exist today for background-limited detection at 200 microns, that researchers are narrowing in on the significant parameters that effect dark current in stressed photoconductors, that these findings may be applied to other photoconductor materials, and that some creative problem solving for an ionizing effect reset mechanism is needed.
    Keywords: INSTRUMENTATION AND PHOTOGRAPHY
    Type: NASA, Ames Research Center, Proceedings of the Third Infrared Detector Technology Workshop; p 5-2
    Format: application/pdf
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