ISSN:
1432-0630
Keywords:
42.60
;
82.50N
;
85.30
Source:
Springer Online Journal Archives 1860-2000
Topics:
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
,
Physics
Notes:
Abstract KrF laser etching of GaAs in Cl2 and O3 gas ambients by direct laser illumination is reported. The etch depth per pulse in Cl2 was found to be linear versus the laser fluence on the sample in the 0.2–1.1 J/cm2 range. It increased as a function of the Cl2 pressure up to 6 Torr and slightly decreased for pressures above this value. It also decreased as a function of the laser repetition rate. Very smoothly etched surfaces were obtained after irradiation using the Cl2 and O3 etching gases. Auger analysis of the etched GaAs surfaces shows almost no traces of chlorine after etching in Cl2, whereas a thick oxide layer of about 1500 Å thickness was found after etching in ozone.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1007/BF00617935
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