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  • American Institute of Physics (AIP)  (3)
  • 1985-1989  (3)
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  • 1985-1989  (3)
Year
  • 1
    Electronic Resource
    Electronic Resource
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 90 (1989), S. 5146-5153 
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: The electronic properties of compensated InP crystals can be used to sensitively monitor gas–surface interactions. When a gas is adsorbed on these low carrier density semiconductors both the conductance and minority carrier lifetime exhibit large changes which we interpret in terms of band bending. Changes of greater than 50% in the bulk-averaged conductance of Fe-compensated semi-insulating InP crystals have been measured for adsorption of ∼0.5 monolayers of Cl2. Using modulated NO2 molecular beams the conductance changes are demonstrated to be fast (〈1 ms to steady state) so as to be capable of yielding quantitative rate information about the gas–surface interaction.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 59 (1986), S. 2213-2215 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have directly measured the excitation of electron-hole pairs at a crystal surface by ground-state neutral atoms. Utilizing seeded molecular beam techniques we have scattered hyperthermal (1–6 eV) Xe atoms from the (100) face of a Ge p-i-n diode and recorded the current transient induced due to the scattering process. We find the product of the excitation and collection probability to be ∼10−4 over a range of kinetic energies 2〈EXe(eV)〈6. The excitation of electron-hole pairs constitutes a small portion of the massive energy loss (ΔE/E∼70%) of the Xe atom to the crystal.
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 87 (1987), S. 1796-1807 
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: We report molecular beam scattering of hyperthermal Xe atoms over an energy range 1〈Ei(eV)〈10 from single crystal surfaces of GaAs(110), Ag(100), and Ge(100). The angular distributions from the corrugated surfaces show sharp backscattered rainbow maxima related to the topography of the crystal surface. In contrast the smooth surfaces yield quasispecular lobes suggestive of structure scattering. The large energy loss for all surfaces scales on average with the energy of local normal motion. A simple binary interaction model is developed which accounts for many of the phenomena observed from corrugated surfaces. With the aid of a comparison classical trajectory study, these results provide some understanding of the mechanism by and extent to which a solid can dissipate the energy of a hyperthermal collision.
    Type of Medium: Electronic Resource
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