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  • American Institute of Physics (AIP)  (2)
  • 1985-1989  (2)
  • 1
    Electronic Resource
    Electronic Resource
    Evaluation of a linear photodiode array detector for synchrotron small-angle x-ray scattering measurements (1989)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 60 (1989), S. 3224-3230 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: A linear photodiode array position-sensitive detector for synchrotron small-angle x-ray scattering was constructed by coupling a fiber-optic face plate coated with a thin layer (∼40 μm) of phosphor (Y2O2S:Tb) onto an electrostatically focused, intensified photodiode array detector (EG&G, PARC, Model 1422) originally designed for visible light applications. The x-ray detector was thoroughly evaluated. It showed excellent linearity of response to the incident x-ray intensity (less than 1%), stable pixel uniformity (an average of ±5%), good spatial linearity (±1 per 100 pixels), and a net gain of ∼17 counts/x-ray photon at 8 keV. The detector quantum efficiency was about 1 for a signal-to-noise ratio of greater than ∼5%. No damage to individual pixels was found after exposure to a main beam of ∼1010 x-ray photons/mm2/s. A finite afterglow ((approximately-greater-than)5 s) was observed for the phosphor inside the intensifier tube. The afterglow that could limit fast time-resolved experiments could be significantly improved by replacing the present intensifier with one using a fast-decay phosphor. The detector usable length could be increased from the present 25 to 50 mm by replacing the fiber-optic face plate with a 2:1 taper.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1140556
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    Paper (German National Licenses)
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  • 2
    Electronic Resource
    Electronic Resource
    Channel doping profile of silicon-on-sapphire transistors (1985)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 57 (1985), S. 2091-2098 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Dopant profiles of low-dose channel implant in silicon-on-sapphire (SOS) field-effect transistors are investigated by comparing results from various techniques, including theoretical calculation by the Stanford University integrated-circuit process simulation program (suprem) and experimental measurements by secondary ion mass spectrometry (SIMS), capacitance-voltage (C-V), spreading resistance and metal-oxide-semiconductor Hall effect. It is shown that, for both phosphorus- and boron-implanted SOS films having constant doping profile at a level close to 1×1016 cm−3, as predicted by suprem and measured by SIMS, the charge density measured by C-V technique and free carrier concentration obtained from spreading resistance technique decrease with increasing distance from the Si surface. For SOS films implanted to a level greater than 1× 1017 cm−3 boron, the dopant profile obtained by SIMS analysis coincides with the charge density profile, measured by C-V technique, and the free carrier concentration profile, deduced from spreading resistance, and the actual mobility in SOS films.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.334401
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    Paper (German National Licenses)
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