ALBERT

All Library Books, journals and Electronic Records Telegrafenberg

X
feed icon rss

Your email was sent successfully. Check your inbox.

An error occurred while sending the email. Please try again.

Proceed reservation?

Export
  • 1
    Electronic Resource
    Electronic Resource
    Measurements of swarm parameters and derived electron collision cross sections in methane (1989)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 65 (1989), S. 3311-3323 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A pulsed drift tube has been used to measure the electron drift velocity in methane over the range of E/N from 10 to 1000 Td. In addition, measurements of the positive ion mobility and ionization coefficient have been made over the range of E/N from 80 to 1000 Td. Within the experimental sensitivity, no evidence of attachment has been observed in this range. A set of electron collision cross sections has been assembled and used in Monte Carlo simulations to predict values of swarm parameters. The cross-section set includes a momentum transfer cross section which is based primarily on the present and previous drift velocity measurements, cross sections for vibrational excitation and ionization based on published experimental cross-section measurements, and a cross section for dissociation into neutral products obtained by subtracting a measured dissociative ionization cross section from a measured total dissociation cross section. Isotropic scattering is assumed for all types of collisions in the Monte Carlo simulations. Good agreement between the predicted and measured values of swarm parameters is obtained without making any adjustments to these cross sections. A two-term Boltzmann equation method has also been used to predict swarm parameters using the same cross sections as input. The two-term results are in poor agreement with experiment and confirm the well-known inadequacy of two-term methods in the case of methane.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.342642
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 2
    Electronic Resource
    Electronic Resource
    Transient diffusion doping in Si (1986)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 59 (1986), S. 2035-2037 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Short-term diffusion cycles ∼10 s are shown to be suitable for shallow junction formation in silicon. Phosphorus diffused from a surface film source can produce shallow 1000–2000 A(ring) layers that have surface doping (approximately-greater-than)1020 cm−3. No diffusion enhancement, such as is often associated with similar cycle implantation annealing, has been encountered and layer depths follow the customary square root of time dependence.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.336386
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
Close ⊗
This website uses cookies and the analysis tool Matomo. More information can be found here...