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  • American Institute of Physics (AIP)  (2)
  • 1985-1989  (2)
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Year
  • 1
    Electronic Resource
    Electronic Resource
    Thin-film CdSe: Photoluminescence and electronic measurements (1988)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 64 (1988), S. 2601-2606 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The electronic properties of thin CdSe films prepared through physical vapor transport were investigated using photoluminescence (PL) and electronic measurements. The films were studied at each of the main preparation steps, i.e., evaporation, annealing, etching, and finally photoetching. At 3 K two distinct donor-acceptor (DA) transitions at 1.75 and 1.70 eV were found in the photoluminescence spectra in addition to deep states at about 1.55 eV at 20 K. These DA transitions which are produced mainly during the evaporation might be associated with group VII and with alkali metal impurities. After each preparation step the DA transitions change their intensities. It is shown that photoetching of the films leads to a removal of the deep centers, while the 1.75 eV transition is blue shifted. In contrast with single-crystal CdSe the intensity of the PL increases after photoetching. The results of the PL are consistent with the electronic measurements. They are explained in terms of a previously published model.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.341649
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  • 2
    Electronic Resource
    Electronic Resource
    Ion beam impact and penetration of polymethyl methacrylate (1985)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 58 (1985), S. 2534-2538 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Depth distributions of energy dissipation and implantation ranges in the polymer resist polymethyl methacrylate (PMMA) have been calculated by using the TRIM computer code. The relevance of such calculations to experimentally obtained data in connection with ion-beam lithography is discussed. It is concluded that the result of the computer simulations may be of value in order to explain the responsible mechanism for the modification (solubility, erosion rate) of a resist material due to ion irradiation. Experimental results of PMMA erosion during ion irradiation are also presented, showing a strong relationship between the erosion and electronic stopping.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.335932
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    Paper (German National Licenses)
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